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Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors:Spin drift effect in the inversion channel and spin relaxation in the n~+-Si source/drain regions

机译：基于Si的旋转金属氧化物 - 半导体场效应晶体管中的旋转传输：旋转漂移效果在反转通道中，N〜+ -SI源/漏区中的旋转弛豫

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In the past decade, Si-based spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs)[1] have been extensively studied as the key devices in next-generation electronics due to their spin-functional nonvolatile/reconfigurable characteristics. Although some previous experimental studies showed the basic operation, the MR ratio was lower than 1%[2,3], which is too small for practical applications. To clarify the detailed spin transport physics in Si-based spin MOSFETs and to improve the MR ratio, we construct analytical formulas that precisely take into account the n+-Si regions at source(S)/drain(D) electrodes as well as the spin drift effect[4] in the inversion channel.

机译：在过去的十年中，由于其自旋函数非易失性/可重新配置特性，已经广泛地研究了基于Si的旋转金属氧化物 - 半导体场效应晶体管（自旋MOSFET）[1]作为下一代电子设备的关键装置。虽然一些先前的实验研究显示了基本操作，但MR比率低于1％[2,3]，这对于实际应用而言太小。为了阐明基于Si的旋转MOSFET的详细旋转输送物理学并改善MR比，建设分析公式，精确地考虑到源（S）/漏极（D）电极的N + -SI区域以及旋转反转通道中的漂移效果[4]。

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《》||09.023-09.023|共1页
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Shoichi Sato; Shota Okamoto; Masaaki Tanaka; Ryosho Nakane;
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1. Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n~+-Si source/drain regions [J] . Shoichi Sato, Masaaki Tanaka, Ryosho Nakane Physical review . 2020,第3期

机译：基于Si的旋转金属氧化物 - 半导体场效应晶体管中的旋转传输：旋转漂移效果在反转通道中，N〜+ -SI源/漏区中的旋转弛豫
2. Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n(+)-Si source/drain regions [J] . Sato Shoichi, Tanaka Masaaki, Nakane Ryosho Physical review, B . 2020,第3期

机译：基于Si的旋转金属氧化物 - 氧化物半导体场效应晶体管的旋转传输：旋转漂移效果在倒置通道中，在N（+） - Si源/漏区中的旋转弛豫
3. Electron spin and momentum lifetimes in two-dimensional Si accumulation channels: Demonstration of Schottky-barrier spin metal-oxide-semiconductor field-effect transistors at room temperature [J] . Sato Shoichi, Ichihara Mitsuki, Tanakal Masaaki, Physical review . 2019,第16期

机译：二维Si累积通道中的电子自旋和动量寿命：室温下肖特基势垒自旋金属氧化物半导体场效应晶体管的演示
4. Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regions [C] . Movva Hema C. P., Ramon Michael E., Corbet Chris M., Device Research Conference (DRC), 2012 70th Annual . 2012

机译：具有源/漏访问区自对准自旋掺杂的石墨烯场效应晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor [O] . Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, -1

机译：基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
7. Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+−Si source/drain regions [O] . Shoichi Sato, Masaaki Tanaka, Ryosho Nakane 2020

机译：Si基旋转金属氧化物 - 半导体场效应晶体管的旋转传输：在倒置通道中的旋转漂移效果，在N + -SI源/漏区中的旋转松弛
8. Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene. [R] . Gupta, J. A. 2017

机译：自旋极化扫描隧道显微镜，用于石墨烯中自旋迁移，自旋弛豫和磁性的原子尺度研究。

Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors:Spin drift effect in the inversion channel and spin relaxation in the n~+-Si source/drain regions

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