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首页> 外文会议>European conference on applied superconductivity >Structural and electrical properties of YBa_2Cu_3O_7 100-tilt grain boundary Josephson junctions with large I_cR_n-products on SrTiO_3 bicrystals
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Structural and electrical properties of YBa_2Cu_3O_7 100-tilt grain boundary Josephson junctions with large I_cR_n-products on SrTiO_3 bicrystals

机译：YBA_2CU_3O_7 100 -TILT谷物边界Josephson结合的结构和电气性质，SRTIO_3 BICrystals上的大型I_CR_N-Products

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The microstructure of 2 x 12° [100]-tilt grain boundary Josephson junctions was investigated by atomic force and cross-sectional transmission electron microscopy. The junctions were prepared by depositing about 100 nm thick epitaxial YBa_2Cu_3O_7 films on the vicinal bicrystal substrates of SrTiO_3 with high pressure oxygen sputtering and showed a 2 x 12° tilt of the YBa_2Cu_3O_7 c-axis towards the grain boundary. The film grain boundary was very straight and followed the bicrystal substrate boundary. It showed a low degree of meandering in comparison to the behaviour of conventional [001]-tilt grain boundaries. Due to step bunching the film surface exhibited a profile of 12° inclined terraces with a valley depth of 5-20 nm and at the grain boundary a straight V-shaped surface suppression of about 40 nm depth was observed. The fact that the I_cR_n-products of such Josephson junctions showed high values of up to 1.2 mV at 77 K and up to 8 mV at 4.2 K as well as a smaller scattering of the values for I_c and R_n in comparison to [0 0 l]-tilt grain boundaries is attributed to the observed microstructure. The junctions showed clear Shapiro steps as a response to 94 GHz microwave radiation.
机译：通过原子力和横截面透射电子显微镜研究了2×12°[100] -TILT晶界约瑟夫森结的微观结构。通过高压氧溅射在SRTIO_3的静脉双晶体基材上沉积约100nm厚的外延YBA_2Cu_3O_7膜，并显示朝向晶界的YBA_2CU_3O_7 C轴的2×12°倾斜，通过沉积约100nm厚的外延YBA_2Cu_3O_7膜来制备。薄膜晶界非常直，然后遵循双晶体基质边界。与常规的行为相比，它显示出低程度的曲折。由于步骤束缚，薄膜表面表现出12°倾斜露台的曲线，其中谷深度为5-20nm，并且在晶界处观察到大约40nm深度的直的V形表面抑制。这一事实是，这种约瑟夫森结的I_CR_N-产品在47 k下显示出高达1.2 mV的高值，最高可达8mV，并且与[0 l相比，I_C和R_N的值较小散射[颗粒边界归因于观察到的微观结构。该接头显示出清晰的Shapiro步骤作为对94GHz微波辐射的反应。

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