MOVPE technology

机译：MOVPE技术

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Layered semiconductor devices consisting of III-V or II-VI materials instead of Si are gaining more and more importance in the field of modern electronics. For example, telecommunication supported by optoelectronic devices is presently one of the most important and rapidly evolving field of advanced high-technology, device applications for III-V based compounds are for instance HEMTs, LEDs, lasers, OEICs, MMICs, HBTs, satellite-bound solar cells with high efficiency etc.; device applications for II-VI materials lie in the field of visible light detectors, infrared detectors, tuneable lasers, LEDs, etc.

机译：由III-V或II-VI材料组成的分层半导体器件而不是Si在现代电子设备领域中获得了越来越重要的。例如，光电器件支持的电信现在是III-V基于化合物的最重要和快速发展的领域中最重要且快速发展的领域之一，例如HEMTS，LED，激光器，OEIC，MMIC，HBT，卫星 - 效率高的太阳能电池等; II-VI材料的设备应用位于可见光探测器，红外探测器，可调调节激光器，LED等领域。

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来源
《IEEE Lasers and Electro-Optics Society Annual Meeting》|1993年||共2页
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Jurgensen H.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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1. Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology [J] . Kalyuzhnyy Nikolay A., Mintairov Sergey A., Salii Roman A., Progress in photovoltaics . 2016,第9期

机译：在不使用应变平衡技术的情况下提高通过MOVPE生长的太阳能电池的InAs / GaAs QD阵列的量子效率
2. AP-MOVPE technology of AIIIBV-N heterostructures for photovoltaic applications [J] . WOJCIECH DAWIDOWSKI, BEATA SCIANA, DAMIAN PUCICKI, Elektronika . 2012,第6期

机译：用于光伏应用的AIIIBV-N异质结构的AP-MOVPE技术
3. Homoepitaxy of ZnTe on (100) oriented substrates: Technology issues and MOVPE growth aspects [J] . Traversa M, Lovergine N, Prete P, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2005,第10a11期

机译：（100）取向衬底上ZnTe的同质外延：技术问题和MOVPE生长方面
4. Advancement in the MOVPE technology to increase the process yield and expand the band gap engineering possibilities [C] . Timo G., Armani N., Abagnale G., IEEE Photovoltaic Specialists Conference . 2014

机译：MOVPE技术的进步，以提高工艺产量并扩大带隙工程的可能性
5. Characteristics of bulk dilute-nitride-antimonide materials grown by MOVPE for high efficiency multi-junction solar cell. [D] . Kim, Taewan. 2014

机译：MOVPE生产的用于高效多结太阳能电池的块状稀氮化物-锑化物材料的特性。
6. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium [O] . Dario Schiavon, Elżbieta Litwin-Staszewska, Rafał Jakieła, 2021

机译：MOVPE生长条件对锗掺杂GaN层的影响
7. Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology [O] . Kalyuzhnyy Nikolay A., Mintairov Sergey A., Salii Roman A., 2016

机译：在不使用应变平衡技术的情况下提高通过MOVPE生长的InAs / GaAs QD阵列的太阳能电池的量子效率

MOVPE technology

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