Preparation of P-microcrystalline Si Films with Low H_2 Dilution Ratio from Photo-CVD Method and Their Application to a-Si Solar Cells

机译：低H_2稀释比从光CVD法的制备及其在A-Si太阳能电池的应用中的稀释比

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Boron-doped #mu#c-Si films were prepared at lower H_2 dilution ratios using mercury-sensitized photo-CVD. Total flow rate and H_2 dilution ratio were found to infuence microcrystallization. The boron-doped Si film deposited at the H_2/SiH_4 dilution ratio of 15 has a crystaline volume fraction of 78.6percent and a dark conductivity of 5.2Scm~(-1).

机译：使用汞敏化的光CVD在较低的H_2稀释比下制备硼掺杂的#mO #C-Si薄膜。发现总流速和H_2稀释比对微晶化进行了造成的。沉积在H_2 / SIH_4稀释比的硼掺杂的Si膜为15的晶体体积分数为78.6％和5.2Scm〜（-1）的暗导率。

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《International photovoltaic science and engineering conference》|1996年||共2页
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Chang Hyun Lee; Woo Yeong Cho; Jae Hoon Jang; Koeng Su Lim;
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中图分类太阳能利用;
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Preparation of P-microcrystalline Si Films with Low H_2 Dilution Ratio from Photo-CVD Method and Their Application to a-Si Solar Cells

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