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Low field relaxation measurements of induced magnetic moment in Bi(2223)/Ag tape and Bi(2212) single crystal

机译:低场松弛测量诱导磁矩在Bi(2223)/ Ag胶带和Bi(2212)单晶

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Relaxation of the induced magnetic moment and of the associated critical current was studied in detail at low external fields on a Bi(2223)/Ag tape and a Bi(2212) single crystal. In the low-field range, both samples exhibited a large variation of the relaxation rate R= -d|m|/dlnt and the normalized relaxation rate S= - dln|m|/dlnt. The maxima of the R(Bt) and S(Bt) dependencies are correlated with the shape of the magnetic hysteresis loop. Above 0.5 T, two relaxation regimes were recognized. The crossover from the fast to the slow relaxation regime is discussed.
机译:在BI(2223)/ AG胶带的低外部领域和Bi(2212)单晶的低外部领域,详细研究了感应磁矩和相关临界电流的弛豫。在低场范围中,两个样品都表现出弛豫率r = -d | m | / dlnt的大变化和归一化弛豫率S = - dln | m | / dlnt。 R(BT)和S(BT)依赖性的最大值与磁滞回路的形状相关。高于0.5吨,识别出两个放松的制度。讨论了从快速放松制度的交叉。

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