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首页> 外文会议>International symposium on plasma chemistry >SURFACE SPECIES CONCENTRATIONS, SUBSTRATF TEMPERATURE AND FILM MORPHOLOGY IN RF THERMAL PLASMA CHEMICAL VAPOR DEPOSITION OF DIAMOND
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SURFACE SPECIES CONCENTRATIONS, SUBSTRATF TEMPERATURE AND FILM MORPHOLOGY IN RF THERMAL PLASMA CHEMICAL VAPOR DEPOSITION OF DIAMOND

机译：表面物种浓度，Substratf温度和薄膜形态在RF热等离子体化学气相沉积中的钻石

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Numerical calculations were conducted to simulate the diamond growth environment during atmospheric-pressure inductively-coupled RF plasma CVD. The predictions of these calculations were compared to previously reported gas chromatograph measurements of several stable hydrocarbon species mole fractions, for gas sampled through a 70-um orifice in the substrate. Agreement is found to be good provided that one accounts for the perturbation caused by the sampling orifice. The model was also used to examine the effect of substrate temperature on methyl and atomic hydrogen concentrations. Quite different trends were found for freestream temperatures of 4000 K and 3000 K. This result is related to the observation that substrate temperature may affect film morphology differently for different growth environments.
机译：进行数值计算以在大气压电感耦合的RF等离子体CVD期间模拟金刚石生长环境。将这些计算的预测与先前报道了几种稳定的烃种类摩尔级分的气相色谱仪测量进行了比较，用于通过基板中的70μm孔采样的气体。如果一个人占采样孔口造成的扰动，则发现良好的协议是良好的。该模型还用于检测底物温度对甲基和原子氢浓度的影响。对于4000 k和3000k的FreeStream温度发现了相当不同的趋势。该结果与观察结果有关，即衬底温度可能影响不同的生长环境的薄膜形态。

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