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Polysilicon nanowires FET as highly-sensitive pH-sensor: modeling and measurements

机译：多晶硅纳米线FET作为高敏感的pH传感器：建模和测量

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摘要

Silicon nanowires have several advantages, such as small size comparable to the size of molecules and high surface to volume ratio. Poly crystalline silicon nanowire based field effect transistors (poly-SiNW FETs) are used as ultrasensitive electronic sensors for pH detection. They are fabricated using a top down approach with simple and low cost fabrication process. Modeling of Metal-Insulator-polysilicon Nanowires (MINW) structure capacitor is performed to estimate the distribution of carrier concentration in the channel. Simulations highlight the effect of positive and negative charges at nanowire-electrolyte interface. Experimental characteristics according to different pH are presented, showing high sensitivity and correlate the modeling.
机译：硅纳米线具有若干优点，例如小尺寸与分子尺寸相当，高表数与体积比相当。聚晶硅纳米线基场效应晶体管（Poly-Sinw FET）用作超敏电子传感器，用于pH检测。它们是使用顶部下降的方法制造，具有简单和低成本的制造工艺。进行金属绝缘体 - 多晶硅纳米线（MINW）结构电容器的建模以估计通道中载体浓度的分布。仿真突出了纳米线电解质界面处的正极和负电荷的影响。提出了根据不同pH的实验特性，显示出高灵敏度并关联建模。

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