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Transient Liquid Phase Sintering of Silicon Nitride with Yttria, Aluminum Nitride and Hafnia

机译:氮化硅氮化硅氮化硅,氮化铝和Hafnia的瞬态液相烧结

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Effect of HfO~2 addition on the densification behaviours and microstructures of sintered products in the Si_3N_4-Y_2O_3-AlN system was investigated. In the HfO_2 doped specimens, the crystallization of the grain boundary phases was promoted. The densification was enhanced by the HfO_2 addition, especially in the range of 1 to 5 wt% below 1800°C. The densities of the specimens fired at 1850 and 1900°C increased with HfO_2 content. It was confirmed that the crystallisation promotion of the grain boundary phases occurred in the high temperature firing of the specimens with HfO_2 addition, which was not observed in without HfO_2. This phenomenon suggested that the full densification and the crystallisation system were carried out through the transient liquid phase sintering.
机译:研究了HFO〜2的作用对Si_3N_4-Y_2O_3-ALN系统中烧结产物的致密化行为和微观结构进行了研究。在HFO_2掺杂标本中,促进了晶界相的结晶。通过HFO_2加入增强致密化,特别是在1至5wt%以下的1至5%低于1800℃的范围内。在1850和1900℃下烧制的标本的密度随HFO_2含量而增加。确实证实,在具有HFO_2的样品的高温烧制中发生晶界相的结晶促进,其中没有在没有HFO_2的情况下观察到的。这种现象表明,通过瞬态液相烧结进行全致密化和结晶系统。

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