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Scanning Kelvin probe microscopy for investigation of microcrystalline silicon pin-solar cells

机译：扫描塞尔文探针显微镜检查微晶硅销太阳能电池的研究

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Scanning Kelvin Probe Microscopy (SKPM) was applied on cross sections of microcrystalline silicon pin diode structurcs deposited by hot-wire chemical vapor deposition (HWCVD) in order to determine the potential and electric field distribution within the devices. Two different deposition approaches for the compensated absorber were investigated In the controlled doping approach the compensated absorber was deposited by mixing a low diborane content to the gas flux. In the residuals doping approach the compensation of the absorber was achieved in the chamber for doped silicon deposition utilizing residual boron from the prior p-type layer deposition step. Comparing measurements with simulations yielded information about the actual defect and dopant distribution within the diode structures.
机译：扫描Kelvin探针显微镜（SKPM）施加在由热线化学气相沉积（HWCVD）沉积的微晶硅引脚二极管结构晶体的横截面上，以确定器件内的电位和电场分布。在受控的掺杂方法中研究了两个不同的沉积方法，通过将低二硼烷含量与气体通量混合来沉积补偿吸收剂。在残留物中，掺杂方法利用来自先前的p型沉积步骤的掺杂硼的掺杂硅沉积中，在腔室中实现吸收器的补偿。比较测量与模拟产生关于二极管结构内的实际缺陷和掺杂剂分布的信息。

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