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Polarization-dependent spectroscopy of the near-bandgap excitonic emission in free standing GaN

机译:在自由常设GaN中近带隙兴奋发射的极化依赖性光谱

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We report a comparative study of the exciton emission in free standing HVPE layer for all polarization configurations. A noticeable difference between the emission spectra polarized perpendicular and parallel to the c-axis of the crystal is observed. The spectra for E⊥C and E‖c are found to be dominated by the emissions of the donor-bound exciton and exciton-polariton both arising from the A and B valence band, respectively, which clearly reveals the optical selection rules in wurtzite GaN. The temperature evolution of the emission spectra is also examined and the thermal redistribution of the excitons at different polarization is discussed.
机译:我们报告了所有极化配置的自由站立HVPE层中激子发射的比较研究。观察到垂直和平行于晶体的C轴偏振的发射光谱之间的明显差异。发现E⊥C和e∈C的光谱分别由来自A和B价频段产生的供体结合的激子和Exciton-Polariton的排放来支配,这显然揭示了Wurtzite GaN中的光学选择规则。还研究了发射光谱的温度演变,并讨论了激子在不同极化下的热再分布。

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