首页> 外文会议>International symposium on Solid Oxide Fuel Cell >CHARACTERIZATION OF ANODE SUBSTRATES AND SUPPORTED ELECTROLYTE THIN FILMS FOR INTERMEDIATE TEMPERATURE SOLID OXIDE FUEL CELLS
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CHARACTERIZATION OF ANODE SUBSTRATES AND SUPPORTED ELECTROLYTE THIN FILMS FOR INTERMEDIATE TEMPERATURE SOLID OXIDE FUEL CELLS

机译:用于中间温度固体氧化物燃料电池的阳极基材和负载电解质薄膜的表征

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The relationship between microstructure, electrical conductivities of La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ)(LSGM) + NiO anode substrates and their compositions has been studied. Anode substrate with 60% NiO content had a preferable microstructure. Electrical conductivity of a reduced substrate with a low NiO content increased rapidly with a. c. impedance measuring time and changed from electronic to ionic in conductivity character. For the reduced substrates with a high NiO content, electrical conductivity increased slowly with measuring time and showed metallic conducting behavior from the beginning. A dense LSGM film with a thickness of 20-50 μm was successfully prepared on this substrate using a costly effective wet chemical-physics method. On the surfaces of LSGM thin films fabricated by non-restraint sintering method, large flat grains were formed and cracks appeared along the grain boundaries after reduced in H_2. Just small grains contacting with each other tightly could be observed on the surfaces of LSGM thin films fabricated by iso-static pressure sintering method, and no cracks appeared along the grain boundaries after reduction in H_2. To avoid reaction between LSGM in the films and the NiO in the substrates, a Ce_(0.8)Sm_(0.2)O_(2-δ) interlayer with a thickness of 2-5 μm was successfully fabricated, forming a sandwich structure.
机译:已经研究了微观结构的关系,研究了LA_(0.9)SR_(0.1)GA_(0.8)Mg_(0.2)O_(3-Δ)(LSGM)+ NIO阳极基材及其组合物的电导率。具有60%NiO含量的阳极基材具有优选的微结构。具有低NiO含量的降低基板的导电性随着a的快速增加。 C。阻抗测量时间并从电子到电导性字符变为离子。对于具有高NiO含量的降低的基材,电导率随着测量时间而缓慢增加,并且从开始时显示金属导电行为。使用昂贵的有效的湿化学物理方法在该基材上成功地制备厚度为20-50μm的致密LSGM膜。在由非约束烧结方法制造的LSGM薄膜的表面上,形成大的扁平晶粒并在H_2中减少后沿晶界出现裂缝。在通过异静压烧结方法制造的LSGM薄膜的表面上可以观察到彼此接触的小颗粒,并且在降低H_2之后,沿晶界没有出现裂缝。为了避免在薄膜中的LSGM和基板中的NIO之间的反应,成功制造厚度为2-5μm的CE_(0.8)SM_(0.2)o_(2-δ)中间层,形成夹层结构。

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