首页> 外文会议>International conference on molecular beam epitaxy >The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems
【24h】

The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems

机译:MBE-种类量子大小半导体低维系统的分数尺寸空间方法

获取原文

摘要

Shallow impurities and excitons in MBE-grown quantum-sized semiconductor low-dimensional systems are studied within the fractional-dimensional space approach. We present calculations for shallow-donor states in GaAs-(Ga,Al)As quantum wells and superlattices and for excitons in GaAs-(Ga,Al)As quantum wells and symmetric-coupled double quantum wells. Effects of growth-direction applied magnetic fields are also considered. Results are shown to be in good agreement with previous variational calculations and available experimental measurements.
机译:在分数维空间方法中研究了MBE-种类量子尺寸的半导体低维系统中的浅杂质和激子。我们将GaAs-(Ga,Al)中的浅供体状态作为量子孔和超晶格的计算以及GaAs-(Ga,Al)中的激子作为量子阱和对称耦合的双量子阱。还考虑了生长方向应用磁场的影响。结果显示与先前的分析计算和可用的实验测量有关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号