• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International conference on molecular beam epitaxy >Enhancement of magneto-optical effect in a GaAs: MnAs hybrid nanostructure sandwiched by GaAs/AlAs distributed Bragg reflectors: epitaxial semiconductor-based magneto-photonic crystal
【24h】

Enhancement of magneto-optical effect in a GaAs: MnAs hybrid nanostructure sandwiched by GaAs/AlAs distributed Bragg reflectors: epitaxial semiconductor-based magneto-photonic crystal

机译：GaAs中的磁光效应的增强：MNA杂交纳米结构由GaAs / Alas分布式布拉格反射器夹在中间：外延半导体基磁光晶体

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

It is shown that magneto-optical effect can be controllably enhanced in a molecular beam epitaxy (MBE) grown semiconductor-based multilayer structure consisting of a magnetic layer and GaAs/AlAs distributed Bragg reflectors (DBR), that is a one-dimensional semiconductor-based magneto-photonic crystal. Here, the magnetic layer is GaAs containing MnAs nanoscale clusters (GaAs: MnAs), which can be formed by annealing (GaMn)As alloys at 500-750°C. Structural and magneto-optical properties of GaAs: MnAs are presented and its dielectric functions are derived. It is shown that DBR/GaAs: MnAs/DBR structures were successfully grown by MBE and their magneto-optical effect is enhanced due to the localization of light at the Bragg wavelength. Comparison with theoretical calculations of the magneto-optical properties and device potentials are also discussed.
机译：结果表明，在由磁性层和GaAs / Ala分布的布拉格反射器（DBR）组成的分子束外延（MBE）种类的基于半导体基的多层结构中，可以控制磁光效应。是一维半导体 - 基于磁光晶体。这里，磁性层是含有MNAs纳米级簇（GaAs：MNA）的GaAs，其可以通过在500-750℃下作为合金的退火（GabN）形成。 GaAs的结构和磁光性能：呈现MNA，推导出其介电功能。结果表明，DBR / GaAs：MBE成功地生长了MBE / DBR结构，并且由于布拉格波长处的光的定位，它们的磁光效应增强。还讨论了与磁光性能和器件电位的理论计算的比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号