首页> 外文会议>International Symposium on Cleaning Technology in Semiconductor Device Manufacturing >A NEW FAILURE MECHANISM BY TUNGSTEN BRIDGING IN A PLUG PROCESS DUE TO INCOMPLETE POST-METAL ETCH RESIDUE CLEAN CAUSING CORROSION AND TUNGSTEN RE-DEPOSITION
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A NEW FAILURE MECHANISM BY TUNGSTEN BRIDGING IN A PLUG PROCESS DUE TO INCOMPLETE POST-METAL ETCH RESIDUE CLEAN CAUSING CORROSION AND TUNGSTEN RE-DEPOSITION

机译:由于金属金属后蚀刻残留物不完整的渗透过程中钨桥接的新故障机制尚不完全腐蚀和钨再沉积

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IC designers sometimes use zero metal overlap of tungsten plug structures to maximize interconnect density. Zero overlap combined with lithography variations may result in partial exposure of the plug during the metal interconnect etch. A new mechanism of bridging metal with exposed underlying tungsten plugs was observed due to incomplete post-metal etch clean chemistry removal. This new mechanism involves corrosion and re-deposition of the tungsten to form an electrical short. Experimental data show that bridging occurrences worsened with increased time between post-metal etch clean and the next oxide deposition step. In this paper we will discuss the mechanism of tungsten corrosion and re-deposition to form the bridging failures due to incomplete hydroxylamine chemistry removal.
机译:IC设计人员有时使用钨插头结构的零金属重叠来最大化互连密度。与光刻变化结合的零重叠可能导致插头在金属互连蚀刻期间的部分曝光。由于金属金属后蚀刻清洁化学除去,观察到具有暴露的钨塞的桥接金属的新机制。这种新机制涉及腐蚀和再沉积钨以形成电气短。实验数据表明,金属金属蚀刻清洁和下一氧化物沉积步骤之间的时间增加了桥接的发生。在本文中,我们将讨论钨腐蚀和重新沉积的机制,以形成弥合羟胺化学除去的桥接故障。

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