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首页> 外文会议>International Workshop on the Physics of Semiconductor Devices >Experimental and Theoretical Studies on Tuning and Frequency Jump of the Millimeter Wave (Ka-Band) IMPATT Devices
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Experimental and Theoretical Studies on Tuning and Frequency Jump of the Millimeter Wave (Ka-Band) IMPATT Devices

机译：毫米波（KA频段）灭活和跳频的实验与理论研究

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摘要

Theoretical and experimental studies on silicon Ka-band IMPATT diodes and their tuning (mechanical and electronic) characteristics are presented in this paper. Experiments have been carried out with Ka-band IMPATT device mounted in a Ka-band waveguide-cum-heatsink fitted with a resonant cap cavity for realizing mm-wave power. The authors have designed a Ka-band diode using a double-iterative d. c. method and studied the small signal property of the designed diode. The small signal study provides the range of frequency of operation of an IMPATT diode and also indicate the optimum frequency at which the diode would oscillate with maximum negative conductance. It is found that experimental values of breakdown voltage, threshold current and optimum operating frequency are in good agreement with the results obtained from computer analysis. It is found that the threshold current and the threshold frequency vary with resonant-cap geometry. It is also found that during simultaneous electronic and mechanical tuning, the operating frequency suddenly jumps upward by 4-7 GHz at current of 90-100 mA. With increase in bias current, the device impedance line shifts and with mechanical tuning, the circuit impedance loop changes its shape. The intersection of changed shape of circuit impedance loop with the changed device impedance line would give rise to such frequency jump.
机译：本文介绍了硅KA波段硅KA频段硅壳体型硅型肌型涂膜的理论和实验研究及其调谐（机械和电子）特性。通过安装在具有用于实现MM波功率的谐振帽腔的KA波段波导 - 散热器中的KA波段Impatt装置进行了实验。作者使用双迭代D设计了一个KA带二极管。 C。方法并研究了设计二极管的小信号特性。小信号研究提供了灭差二极管的操作频率范围，并且还指示二极管将以最大负导流振荡的最佳频率。发现击穿电压，阈值电流和最佳工作频率的实验值与计算机分析中获得的结果吻合良好。发现阈值电流和阈值频率随谐振帽几何而变化。还发现在同时电子和机械调谐期间，工作频率突然在90-100 mA的电流下向上跳跃4-7GHz。随着偏置电流的增加，器件阻抗线路偏移和机械调谐，电路阻抗回路改变其形状。改变电路阻抗环的交叉与改变的装置阻抗线的形状会产生这种频率跳跃。

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