A detailed study of the optimized processes for phosphorus doping on close to stoichiometry amorphous SiC by ion implantation and subsequent annealing is presented. The a-SiC:H films were deposited by plasma enhanced chemical vapor deposition in "starving plasma" conditions with and without H_2 dilution. Phosphorus was implanted using multiple energies and doses in order to define a 300 nm thick homogeneously doped layer with plateau concentration varying between 10~(18) and 10~(21) cm~(-3), according to previous simulations. The electrical characterization for the films implanted with varying phosphorus content and the effect of different annealing temperatures are reported. The results show that the conductivity of the films increases with the increase of the doping concentration. For the best case a dark conductivity of ～10~(-4) (Ω.cm)~(-1) at room temperature was obtained and the lowest activation energy was 0,1 eV, indicating that close to device quality material was obtained.
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