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首页> 外文会议>Annual IEEE Gallium Arsenide Integrated Circuit Symposium >A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
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A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond

机译：高增益带宽产品INP HEMT分布式放大器，具有92 GHz截止频率，可为40 Gbit / s应用及超越

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摘要

The design, fabrication and characteristics of a coplanar distributed ultra broadband amplifier are presented. The circuit is fabricated using a composite channel InP CC-HEMT high breakdown voltage technology with developed in Alcatel OPTO+. It exhibits an average gain of 13dB over a 92 GHz -3dB cut-off frequency that corresponds to a state of the art gain-bandwidth product of 410 GHz for baseband amplifier IC's. It still presents 8 dB gain at 110 GHz Such an amplifier is a good candidate for 40 and 80 Gbit/s optoelectronic driver modules applications. We will discuss the use of coplanar wave-guide lines and low impedance bias micro-strip transmission lines in such a design. We will also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain-bandwidth product for 80 Gbit/s ETDM communications.
机译：介绍了共面分布式超宽带放大器的设计，制造和特性。该电路采用复合通道INP CC-HEMT高击穿电压技术制造，具有在Alcatel Opto +中开发的。它在92GHz -3dB截止频率上表现出13dB的平均增益，该截止频率对应于基带放大器IC的410 GHz的领域的最新状态。它仍然在110GHz上提出了8个DB增益，这种放大器是40和80 Gbit / S光电驱动器模块应用的良好候选者。我们将讨论在这种设计中使用共面波引导线和低阻抗偏置微条传输线。我们还将突出40 Gbit / s眼图质量的最大带宽的需要和80 Gbit / s ETDM通信所需的增益带宽产品。

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