Bias dependence of 0.25μm pHEMT parasitic elements as determined with a direct extraction method

机译：用直接提取法测定的0.25μmPhemt寄生元件的偏置依赖性

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A previously published extraction method has been modified for the drain current controlling voltage across C{sub}(gs) only and applied to study the bias dependence of pHEMT parasitic element values. It was found that some of the parasitic elements, particularly L{sub}d and R{sub}d, exhibited significant bias dependence. These results suggest that the assumption of bias independence of the parasitic elements is at best an approximation and may not produce the optimum model.

机译：仅在C {Sub}（GS）上的漏极电流控制电压被修改了先前公布的提取方法，并应用于研究PHEMT寄生元件值的偏置依赖性。发现一些寄生元件，特别是L {sub} d和r {sub} d表现出显着的偏置依赖性。这些结果表明，寄生元素的偏置独立性的假设是最好的近似，并且可能不会产生最佳模型。

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《Annual IEEE Gallium Arsenide Integrated Circuit Symposium》|2002年||共4页
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Charles F. Campbell;
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中图分类 TN43-53;
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4. Bias dependence of 0.25 /spl mu/m pHEMT parasitic elements as determined with a direct extraction method [C] . Campbell, C.F. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest . 2002

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Bias dependence of 0.25μm pHEMT parasitic elements as determined with a direct extraction method

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