Three-dimensional analysis of leakage currents in III-V HBTs

机译：III-V HBTs漏电流的三维分析

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We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification for the need of three-dimensional simulation and addresses critical development modeling, and simulation issues.

机译：我们为MMIC中应用的真实HBT结构提供了全三维仿真结果。尝试解释完全电压范围内的设备行为进行泄漏的调查。本文对需要三维模拟的要求，并解决了关键开发建模和仿真问题。

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《Annual IEEE Gallium Arsenide Integrated Circuit Symposium》|2002年||共4页
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V. Palankovski; R. Klima; R. Schultheis; S. Selberherr;
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Three-dimensional analysis of leakage currents in III-V HBTs

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