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首页> 外文会议>International Congress on Plasma Physics >Titanium oxidation by rf inductively coupled plasma
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Titanium oxidation by rf inductively coupled plasma

机译：RF电感耦合等离子体的钛氧化

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The development of titanium dioxide (TiO_2) films in the rutile and anatase phases is reported. The films have been obtained from an implantation/diffusion and sputtering process of commercially pure titanium targets, carried out in up to 500 W plasmas. The experimental outcome is of particular interest, in the case of anatase, for atmospheric pollution degradation by photocatalysis and, as to the rutile phase, for the production of biomaterials required by prosthesis and implants. The reactor employed consists in a cylindrical pyrex-like glass vessel inductively coupled to a 13.56 MHz RF source. The process takes place at a 5×10~(-2) mbar pressure with the target samples being biased from 0 to -3000 V DC. The anatase phase films were obtained from sputtering the titanium targets over glass and silicon electrically floated substrates placed 2 cm away from the target. The rutile phase was obtained by implantation/diffusion on targets at about 700 °C. The plasma was developed from a 4:1 argon/oxygen mixture for ~5 hour processing periods. The target temperature was controlled by means of the bias voltage and the plasma source power. The obtained anatase phases did not require annealing after the plasma oxidation process. The characterization of the film samples was conducted by means of x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Raman spectroscopy.
机译：据报道了金红石和锐钛矿相中二氧化钛（TiO_2）薄膜的发展。从商业上纯钛靶标的植入/扩散和溅射过程中获得了薄膜，其在高达500 W等离子体中进行。在锐钛矿的情况下，实验结果特别感兴趣，用于通过光催化和金红石相，用于生产假体和植入物所需的生物材料的常压降解。所用的反应器包括在圆柱形的玻璃血管中，电感地耦合到13.56MHz的RF源。该过程发生在5×10〜（-2）毫巴的压力下，目标样本从0到-3000 V DC偏置。从玻璃和硅电浮子基板上溅射钛靶溅射2cm远离靶的硅基菌属的钛靶膜获得。通过在约700℃下植入/扩散获得金红石相。从4：1氩/氧气混合物中开发了血浆〜5小时加工期。通过偏置电压和等离子体源功率控制目标温度。在等离子体氧化过程之后，所得锐钛矿相的阶段不需要退火。通过X射线衍射，扫描电子显微镜，X射线光电子能谱和拉曼光谱进行薄膜样品的表征。

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