Starting from a phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf) power of an asymmetric capacitively coupled discharge in NF_(3) we study the dependence of the ion flux onto the powered electrode on the gas pressure. Solving numerically the model's basic equations we are able to extract the magnitude of the ion flux (at three different gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.
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机译：从产生自偏置电压的现象学模型开始作为NF_（3）中的不对称电容耦合放电的吸收射频（RF）功率的函数，我们将离子通量的依赖性研究到气体上的动力电极上压力。在数字上求解模型的基本方程，我们能够通过使用易于可测量的数量来提取技术蚀刻装置（Alcatel Gir 220）中的离子通量（三种不同的气体压力）的大小，特别是自偏置电压和吸收的RF功率。
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