Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As

机译：在N-GE中的绝缘子 - 金属过渡附近的反铁磁旋转玻璃排序：如

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Electron spin resonance investigation in the insulator phase of compensated n-Ge:As shows that near the insulator — metal transition the weakly localized electrons are connected in the pairs with the antiparallel coupled spins. As a result, the antiferromagnetic spin glass structure is created. The main manifestations of the phenomenon are the fall of the free (unpaired) spin density, the free spin increase with temperature, and characteristic antiferromagnetic g-factor shift with the electron density in the pretransition range.

机译：电子自旋共振调查在补偿N-GE的绝缘阶段：如图所示，在绝缘体 - 金属转换附近，弱局部化电子以反平行耦合的旋转相连。结果，产生防铁磁性旋转玻璃结构。该现象的主要表现是自由（未配对）的旋转密度的下降，自由旋转随温度的增加，以及具有预推动范围内的电子密度的特性反铁磁性G因子。

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《International Conference on the Physics of Semiconductors》|2005年||共2页
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A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek; S. I. Goloshchapov;
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中图分类 TN305.2-532;
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1. Antiferromagnetic spin glass orderingin the compensated n-Ge near the insulator-metal transition [J] . A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, Physica Status Solidi. C, Conferences and critical reviews . 2004,第1期

机译：反铁磁自旋玻璃在绝缘体-金属跃迁附近的补偿n-Ge中的有序化
2. Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition [J] . Veinger A.I., Zabrodskii A.G., Makarova T.L., Journal of Experimental and Theoretical Physics . 2013,第5期

机译：非金属n-Ge：As半导体中金属-绝缘体相变附近的磁序的低温变化
3. Antiferromagnetic spin glass in doped Ge near insulator-metal transition [J] . A. G. Zabrodskii, Anatoly I. Veinger, T. V. Tisnek, Applied Magnetic Resonance . 2009,第3期

机译：接近绝缘体-金属过渡区的掺杂锗中的反铁磁自旋玻璃
4. Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As [C] . A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, International Conference on the Physics of Semiconductors . 2005

机译：在N-GE中的绝缘子 - 金属过渡附近的反铁磁旋转玻璃排序：如
5. Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO3 =Dimensionalit?tsgetriebener Metal-Isolator-übergang in Spin-Bahn-gekoppeltem SrIrO3 [D] . Schütz, Philipp. 2020

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6. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition [O] . Mengmeng Yang, Yuanjun Yang, Bin Hong, -1

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Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As

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