首页> 外文会议>International Symposium on board MS Midnatsol >NUMERICAL - EXPERIMENTAL INVESTIGATION OF CRYSTAL GROWTH RATE DEPENDENCE ON FACET UNDERCOOLING FOR DIELECTRIC CRYSTAL GROWTH FROM THE MELT
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NUMERICAL - EXPERIMENTAL INVESTIGATION OF CRYSTAL GROWTH RATE DEPENDENCE ON FACET UNDERCOOLING FOR DIELECTRIC CRYSTAL GROWTH FROM THE MELT

机译:晶体生长速度依赖性对熔体介电晶体生长的晶体生长速率依赖性的数值实验研究

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Combined experimental and numerical tools are developed and used to define more exactly the growth kinetic relations for (211) crystallographic orientation of Bi_4Ge_3O_(12) (BGO) crystal growth, namely, the dependence of crystal growth rate V on supercooling, ΔT of the melt/crystal interface. New apparatus for measurements of the in situ time dependence of the supercooling, ΔT(t), was used and a new two-dimensional numerical model was applied to analyze the effect of temperature boundary conditions and faceting phenomena on the character of the observed V(ΔT) dependence. Results show that, for the variant of the crystal growth technique which was used (melt cooling during Axial Heating Process method - AHP method), the type of the V(ΔT) dependence does not depend on boundary conditions. The new investigations illustrate the superlinear behavior for V(ΔT) dependence for (211) BGO crystallographic orientation and show that previous data on sublinear behavior of V(ΔT) dependence for this crystallographic orientation of BGO have not been justified.
机译:组合的实验和数值工具被开发并用于定义(211)Bi_4ge_3O_(12)(BGO)晶体生长的(211)晶体增长的增长动力学关系,即晶体生长速率V对过冷,熔体ΔT的依赖性/晶体界面。使用过冷,ΔT(t)的原位时间依赖性的新装置,并应用了新的二维数值模型来分析了温度边界条件和刻面现象对观察到的v的特征的影响( Δt)依赖性。结果表明,对于所用的晶体生长技术的变体(轴向加热过程方法 - AHP方法期间的熔体冷却),V(ΔT)依赖性的类型不依赖于边界条件。新的研究说明了对(211)BGO结晶取向的V(ΔT)依赖性的超连线行为,并表明,关于该BGO的这种晶体取向的V(ΔT)依赖性的先前数据依赖性。

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