Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module

机译：开发的1200V / 50A完整SiC岩位器和VMOS电源模块的比较研究

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This study developed two types full SiC half bridge power module, which consist of IEMOS (Implantation Epitaxial MOSFET / Planer structure) or VMOS (V-groove trench MOSFET / Trench structure). The switching loss and conduction loss of the power module are evaluated in H bridge circuit. The VMOS module experimentally shows less loss than IEMOS module.

机译：本研究开发了两种全款SiC半桥电源模块，由IEMOS（植入外延MOSFET /刨床结构）或VMOS（V沟槽沟MOSFET /沟槽结构）组成。电源模块的开关损耗和导通损耗在H桥电路中进行评估。 VMOS模块通过IEMOS模块实验显示较少的损失。

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《European Conference on Silicon Carbide and Related Materials》|2019年|xxi 894 p. :|共4页
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作者
Kei Hayashi; Tsuyoshi Funaki; Hisato Michikoshi; Kenji Fukuda;
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原文格式 PDF
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中图分类 73.7233083;
关键词
SiC power module; IEMOS; VMOS; Loss evaluation test;

机译：SIC电源模块;IEMOS;VMOS;损失评估测试;

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专利

1. Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module [J] . Kei Hayashi, Tsuyoshi Funaki, Hisato Michikoshi, Materials science forum . 2019,第期

机译：开发的1200V / 50A完整SIC岩位器和VMOS电源模块的比较研究
2. Mitsubishi Electric Launches 1200V/50A Large-Type Dual In-line Package Intelligent Power Module [J] . The British journal of general practice: the journal of the Royal College of General Practitioners . 2012,第601期

机译：三菱电机推出1200V / 50A大型双列直插封装智能电源模块
3. Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules [J] . D.C. Sheridan, A. Ritenour, V. Bondarenko, Materials science forum . 2011,第期

机译：低开关能量1200V常关SiC VJFET电源模块
4. Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module [C] . Kei Hayashi, Tsuyoshi Funaki, Hisato Michikoshi, European Conference on Silicon Carbide and Related Materials . 2019

机译：开发的1200V / 50A完整SiC岩位器和VMOS电源模块的比较研究
5. Development of Advanced SiC Power Modules [D] . Xu, Yang. 2017

机译：开发先进的SiC功率模块
6. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2020

机译：1200V / 200A全SiC电源模块在开启瞬态时上侧和下侧开关的vgs特性的建模和分析
7. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2019

机译：用于1200V / 200A全款电源模块的开启瞬态上侧和下侧开关VGS特性的建模与分析

Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module

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