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Assembly of Nanocrystalline Silicon Quantum Dots based on a Colloidal Solution Method

机译：基于胶体溶液法的纳米晶硅量子点组装

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In this paper we propose and develop a new bottom-up approach to the formation of silicon nanostructures based on assembly of nanocrystalline (nc) Si dots from the colloidal solution. The nc-Si dots with a diameter of 8 + - 1 nm were fabricated by using VHF plasma decomposition of pulsed SiH_4 gas supply and deposited on the substrate randomly. For preparing the nc-Si dot colloidal solution, we first examined various kinds of solvent. The substrates 01 which the nc-Si dots deposited were immersed into the solvents, and ultra sonic treatment was applied for a few tens seconds. It was found that methanol works as a suitable solvent for nc-Si dots. The nc-Si dot solution was then condensed by evaporating the solvent a fraction. We dropped the nc-Si dot solution onto other substrates and evaporated it completely. We observed that the nc-Si dots were assembled in the solution via the lateral capillary meniscus force which works as an attractive force between the dots. Use of SiO_2 substrate with good surface wettability with the solution was found vital to have the maximum meniscus force and to have two-dimensional assembly of the dots. The evaporation speed was carefully controlled via temperature and evaporation pressure to achieve high dot density assembly. In addition, we examined the assembly of the nc-Si dots on the silicon-on-insulator substrates with various kinds of nanoscale patterning and succeeded in making the nc-Si dots cluster bridging between the nano-electrodes with a gap of as small as 20 nm.
机译：在本文中，我们提出并开发了基于胶体溶液的纳米晶（NC）Si点的组装形成硅纳米结构的新的自下而上方法。通过使用VHF等离子体分解的脉冲SIH_4气体供应并随机沉积在基质上，制造直径为8±1nm的NC-Si点。为了制备NC-Si点胶体溶液，我们首先检查了各种溶剂。将沉积的NC-Si点浸入溶剂中的基板01，施加超声波处理几十秒。发现甲醇作为NC-Si点的合适溶剂。然后通过蒸发溶剂馏分来冷凝NC-Si点溶液。我们将NC-Si点溶液丢弃到其他基材上并完全蒸发。我们观察到NC-Si点通过横向毛细血管弯月体组装在溶液中，该力是在点之间的吸引力。用溶液使用具有良好表面润湿性的SiO_2基板对于具有最大弯月面力并且具有多点的二维组装。通过温度和蒸发压力仔细控制蒸发速度以实现高点密度组装。此外，我们在绝缘体上的NC-Si点的组装用各种纳米级图案化，并成功地使NC-Si点簇在纳米电极之间桥接，具有小于的间隙20纳米。

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