首页> 外国专利> A METHOD MANUFACTURING COLLOIDAL SILICON QUANTUM DOT VISIBLE SPECTRUM LIGHT-EMITTING DIODE, AND COLLOIDAL SILICON QUANTUM DOT VISIBLE SPECTRUM LIGHT-EMITTING DIODE

A METHOD MANUFACTURING COLLOIDAL SILICON QUANTUM DOT VISIBLE SPECTRUM LIGHT-EMITTING DIODE, AND COLLOIDAL SILICON QUANTUM DOT VISIBLE SPECTRUM LIGHT-EMITTING DIODE

机译:制造胶体硅量子点可见光谱发光二极管的方法和胶体硅量子点可见光谱发光二极管

摘要

A method for manufacturing a colloidal silicon quantum dot visible spectrum light-emitting diode includes the steps of forming a transparent first electrode; forming a hole-injection layer overlying the first electrode; forming a hole-transport layer overlying the hole-injection layer; forming a silicon quantum dot layer overlying the hole-transport layer; forming an electron-transport layer overlying the silicon quantum dot layer; and forming a second electrode overlying the electron-transport layer, wherein the silicon quantum dot layer includes a plurality of silicon quantum dots having a diameter of less than 6 nanometers.
机译:一种胶体硅量子点可见光谱发光二极管的制造方法,包括形成透明的第一电极的步骤。在第一电极上形成空穴注入层;形成覆盖空穴注入层的空穴传输层;在空穴传输层上形成硅量子点层;在硅量子点层上形成电子传输层;形成覆盖所述电子传输层的第二电极,其中所述硅量子点层包括多个直径小于6纳米的硅量子点。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号