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首页> 外文期刊>ACS applied materials & interfaces >Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands
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Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands

机译：基于胶体硅量子点用辛基和苯基丙基配体的发光二极管

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Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of similar to 0.64 mW/cm(2) from PhPr-Si QD LEDs and highest EQE of similar to 6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.
机译：胶体硅量子点（SI QDS）对开发新颖的光电器件（如发光二极管（LED））保持不断增长的承诺。虽然已经提出了胶体Si QDS表面的配体可以显着影响基于胶体Si QD的LED的性能，但是已经进行了很少的系统工作，以比较使用具有不同配体制造的LED的性能。 。这里，采用具有相当短的辛基配体（辛基-SiQDS）和苯丙基配体（PHPR-SIQDS）的胶体SiQds用于制造LED。发现PHPR-SI QD LED的光功率密度大于Octyl-Si QD LED的光功率密度。这是由于PHPR-SiQDS的表面更氧化并且比辛基-SiQds更缺乏缺陷。此外，苯基丙基配体的苯环显着增强了QD LED的电子传输。有趣的是，由于苯基丙基配体的苯环抑制了QD LED的空穴传输，因此PHPR-SI QD LED的外部量子效率（EQE）低于Octyl-Si QD LED的外部量子效率（EQE）。 PHPR-SI QD LED中的电子和空穴注入之间的不平衡比Octyl-Si QD LED中的更严重。目前获得的最高光功率密度与PHPR-SI QD LED的0.64mW / cm（2）和与Octyl-Si QD LED类似的最高EQE相似的最高EQE应该鼓励努力进一步推进高性能光电的发展基于胶体Si QD的器件。

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