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首页> 外文会议>International Conference on Advanced Ceramics and Composites >MAGNESIA AND YTTRIA BASED COATINGS FOR DIRECT-COPPER-BONDING OF SILICON NITRIDE CERAMICS
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MAGNESIA AND YTTRIA BASED COATINGS FOR DIRECT-COPPER-BONDING OF SILICON NITRIDE CERAMICS

机译：基于氧化硅陶瓷直接铜粘结的镁质和yTTRIA的涂料

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摘要

Besides excellent bending strength, high fracture toughness and good thermal conductivity Si_3N_4 ceramics are of great interest for DCB substrates in power electronic applications. Unlike oxide ceramics like Al_2O_3, which are commonly used as a DCB substrate, it is hard to produce DCB coated Si_3N_4 circuit boards due to poor bonding of Cu. Therefore this work investigates adherence mechanisms between copper and MgO or Y_2O_3 coated Si_3N_4 ceramics, respectively. Oxide layers of various composition and thickness were formed by sol gel technique via dip coating; The microstructure was characterized by grazing incidence XRD and SEM as a function of Si_3N_4 oxidation and annealing. The stability of the compounds and the reversibility of chemical reactions appear to be dependent on the amount of oxygen present in the system as well as on layer composition and structure. The bonding strength of the Cu metallization on the coated Si_3N_4 was determined by shear tests. The chemistry of the substrate strongly affects the interfacial bonding strength. Copper on MgO coated Si_3N_4 exhibited higher peel adhesion strength than on Y_2O_3 coated Si_3N_4. This could be attributed to the formation of different reaction products in the interface and a pore-free contact area.
机译：除了出色的弯曲强度，高断裂韧性和良好的导热性Si_3N_4陶瓷对于电力电子应用中的DCB基板具有很大兴趣。与Al_2O_3这样的氧化物陶瓷不同，其通常用作DCB基板，由于Cu的粘接不良，难以产生DCB涂覆的Si_3N_4电路板。因此，该工作分别研究了铜和MgO或Y_2O_3涂覆的Si_3N_4陶瓷之间的粘附机制。通过浸涂通过溶胶凝胶技术形成各种组成和厚度的氧化物层;通过涂覆XRD和SEM作为Si_3N_4氧化和退火的函数的特征在于微观结构。化合物的稳定性和化学反应的可逆性似乎取决于系统中存在的氧气量以及层组合物和结构。通过剪切试验测定涂覆的Si_3N_4上Cu金属化的粘合强度。基材的化学强烈影响界面粘合强度。 MgO涂覆Si_3N_4上的铜表现出比在Y_2O_3涂覆的Si_3N_4上更高的剥离粘合强度。这可能归因于界面中的不同反应产物和无孔接触面积。

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