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首页> 外文会议>Annual Conference on Magnetism and Magnetic Materials >(07C907) Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer
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(07C907) Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer

机译：（07C907）通过调整CoFeb自由层的各向异性来减少垂直磁隧道结中的开关电流密度

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The spin torque switching behavior of perpendicular magnetic tunnel junctions consisting of a CoFeB free layer and a CoFeB/Ru/(Co/Pd)n exchanged coupled fixed layer is investigated. At first, the Ru and CoFeB layer thickness is tuned in the CoFeB/Ru/(Co/Pd)n structure to form a ferromagnetically exchange coupled structure with a strong PMA at an annealing treatment of 325 °C for 1 h. Then it is shown that that the CoFeB free layer thickness plays an important role in the switching current density. The switching current density decreases with the increase of the CoFeB free layer thickness. A minimum switching current density of 1.87 MA/cm~2 is achieved for a device with 60 nm diameter. The mechanism involved in the switching current reduction with the decrease of CoFeB free layer thickness is also studied.
机译：研究了由CoFeB自由层和CoFeB / Ru /（Co / Pd）N交换的耦合固定层组成的垂直磁隧道结的自旋扭矩切换行为。首先，在CoFeB / Ru /（Co / Pd）N结构中调谐Ru和CoFeB层厚度，以形成具有强PMA的铁磁性交换耦合结构，其退火处理325℃持续1小时。然后表明CoFeb自由层厚度在开关电流密度中起重要作用。随着CoFeb自由层厚度的增加，开关电流密度降低。对于直径为60nm的装置，实现了1.87mA / cm〜2的最小开关电流密度。还研究了随着COFEB自由层厚度减小的开关电流减小的机制。

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