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首页> 外文会议>European Photovoltaic Solar Energy Conference >Characterization of the locally fluctuating absorbance and quasi-Fermi level splitting of Cu(In, Ga)S_2 thin films by spatially resolved photoluminescence measurements
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Characterization of the locally fluctuating absorbance and quasi-Fermi level splitting of Cu(In, Ga)S_2 thin films by spatially resolved photoluminescence measurements

机译：通过空间分辨的光致发光测量表征Cu（In，Ga）S_2薄膜的局部波动和准fermi水平分裂

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Chalcopyrite absorbers gain more and more importance in thin film photovoltaics. Besides Cu(In, Ga)Se_2, which reaches efficiencies of up to 19.9%, the sulphured counterpart CuInS_2 or Cu(In, Ga)S_2 is presently being considered as an alternative providing a larger band gap and thus higher open circuit voltage. Analogously with Cu(In, Ga)Se_2, Cu(In, Ga)S_2 shows a high degree of spatial inhomogeneities in structural, optical and optoelectronic properties on the length scale of grain sizes and above which is caused by the grainy structure and the inhomogeneous growth of absorber layers. To analyze these locally fluctuating magnitudes spectrally resolved photoluminescence measurements with high lateral resolution (≤1μm) in a confocal microscope set-up have been performed. Based on these data sets and on Planck's generalized law the determination of the spatial variation in the splitting of the quasi-Fermi levels (Δ(E_(fn)-E_(fp))) and access to the local absorbance is possible. A comparison of these properties, which are crucial for the solar light conversion efficiency of a final cell, is made for CuInS_2 and Cu(In, Ga)S_2 absorber layers for data obtained from statistically representative scan areas. The results show that an increase in the band gap and the mean Δ(E_(fn)-E_(fp)) due to an incorporation of gallium does not come along with a decrease in the variation of Δ(E_(fn)-E_(fp)) over the absorber layer. A further analysis by a detailed cross-correlation between the splitting of the quasi Fermi levels and the local absorbance of an absorber leads to the conclusion that the local Δ(E_(fn)-E_(fp)) is reduced by the excess-carrier recombination via deep defects.
机译：Chalcostite吸收剂在薄膜光伏中获得了越来越重要的。除了达到高达19.9％的效率的Cu（In，Ga）Se_2之外，目前被认为是难以认为较大的带隙并因此被认为是提供更大的带隙并且更高的开路电压的替代方案。类似地与Cu（In，Ga）Se_2，Cu（In，Ga）S_2显示了结构，光学和光电性能的高度空间不均匀性，在晶粒尺寸的长度和上述是由颗粒状结构和不均匀引起的吸收层的生长。为了分析这些局部波动的大小，已经进行了在共聚焦显微镜设置中具有高横向分辨率（≤1μm）的光谱分辨的光致发光测量。基于这些数据集和普朗克的广义定律，确定准fermi水平分裂的空间变化（Δ（e_（e_（fn）-e_（fp））和访问局部吸光度。对于来自统计代表性扫描区域获得的数据，对CUINS_2和CU（IN，GA）S_2吸收层进行了对最终单元的太阳光转换效率至关重要的这些性质的比较。结果表明，由于镓的掺入，带隙的增加和平均δ（e_（fn）-e_（fp））不会随着δ（e_（fn）-e_的变化而下降（FP））在吸收层上。通过对准fermi水平的分裂与吸收器的局部吸光度之间的详细互相关进一步分析，该结论是通过多余载波减少了局部δ（e_（fn）-e_（fp））通过深缺陷重组。

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