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Cu(Ga AND/OR In)Se2 THIN FILM LAYER, Cu(InGa)(S, Se)2 THIN FILM LAYER, SOLAR BATTERY AND METHOD FOR FORMING Cu(Ga AND/OR In)Se2 THIN FILM LAYER
Cu(Ga AND/OR In)Se2 THIN FILM LAYER, Cu(InGa)(S, Se)2 THIN FILM LAYER, SOLAR BATTERY AND METHOD FOR FORMING Cu(Ga AND/OR In)Se2 THIN FILM LAYER
PROBLEM TO BE SOLVED: To provide a Cu(Ga AND/OR In)Se2 thin film layer, a Cu(InGa)(S, Se)2 thin film layer, a solar battery, a method for forming a Cu(Ga AND/OR In)Se2 thin film layer, and a method for forming a Cu(InGa)(S, Se)2 thin film layer. SOLUTION: In the method for forming a Cu(Ga AND/OR In)Se2 thin film layer, the thin film is obtained by forming a thin film by supplying a gaseous Ga and/or In in a quantity exceeding the stoichiometric quantity compared to a Cu in the presence of a fully excessive gaseous Se, and annealing the thin film at a range of 400 deg.C-500 deg.C at the presence of oxygen, and removing a gallium oxide and/or an indium oxide layer formed on the surface by etching.
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机译：解决的问题：提供Cu（Ga AND / OR In）Se 2薄膜层，Cu（InGa）（S，Se）2薄膜层，太阳能电池，形成Cu（Ga AND //的方法或In）Se 2薄膜层，以及形成Cu（InGa）（S，Se）2薄膜层的方法。解决方案：在形成Cu（Ga AND / OR In）Se2薄膜层的方法中，通过提供比化学计量量多的化学计量的气态Ga和/或In来形成薄膜，从而获得薄膜。 Cu在完全过量的气态Se存在下，并且在氧气存在下在400℃至500℃的范围内对薄膜进行退火，并去除形成在金属上的氧化镓和/或氧化铟层。通过蚀刻表面。
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