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首页> 外文会议>IEEE Non-Volatile Semiconductor Memory Workshop >Modeling and Characterization of Program/Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiN{sub}x-Al{sub}2O{sub}3-Metal Gate) Cells for NAND Flash Memory
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Modeling and Characterization of Program/Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiN{sub}x-Al{sub}2O{sub}3-Metal Gate) Cells for NAND Flash Memory

机译：用于NAND闪存的编程/擦除速度的建模与表征锡栅训练速度和锡栅扫描的保留（Si-oxide-sin {sub} 2o {sub} 3-metal栅极）单元

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Beyond sub-40nm NAND flash memory, MANOS (Si-SiO{sub}2-SiNx-Al{sub}2O{sub}3-Metal gate) is known as the most promising structure to substitute the floating gate (FG) cell [1]. In MANOS structure, physical properties of trapping nitride plays an important role to decide cell performance, and these are usually represented by trap (energy) level, trap density (Nt), and capture cross-section (CCS). In this study, physical properties of different trapping nitrides were extracted, and the program efficiency of MANOS cell was explained. We also showed shallow traps were generated at trapping nitride by etching damage, and this could be cured resulting great improvement of cell performance. Lastly, erasure mechanism of TiN-gate MANOS cell was discussed with some experimental and modeling results.
机译：超出Sub-40nm NAND闪存，Manos（Si-SiO {Sim} 2-Sinx-Al {Sub} 2O {Sub} 3金属栅极）被称为替代浮栅（FG）单元的最有希望的结构[ 1]。在Manos结构中，捕获氮化物的物理性质起到决定细胞性能的重要作用，并且这些通常由陷阱（能量）水平，捕集密度（NT）和捕获横截面（CC）表示。在该研究中，提取了不同捕获氮化物的物理性质，并解释了Manos细胞的程序效率。我们还通过蚀刻损坏捕获氮化物时产生浅陷阱，这可能会产生巨大改善细胞性能。最后，讨论了一些实验和建模结果讨论了锡栅部甘露出细胞的擦除机制。

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