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首页> 外文会议>European Solid State Device Research Conference >Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution
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Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

机译：通过利用TMAH溶液中的各向异性湿法蚀刻来制造高性能AlGaN / GaN FinFET

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AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various finwidths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of - 3.5 V and extremely broad transconductance (g_m) characteristic ranging from - 2 to~ 3 V at Vd= 5 V which is essential for high linearity device performance. This broad g_m characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin= 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.
机译：通过利用电子束光刻和另外的各向异性侧壁湿法蚀刻来制造具有非常陡峭的侧壁和各种翅膀（WFIN）的AlGaN / GaN的翅片式场效应晶体管（FinFET）通过在四甲基氢氧化铵（TMAH）溶液中进行另外的各向异性侧壁湿法蚀刻来制造。具有180nm的WFIN的器件通常开启性能，具有阈值电压的-3.5V和极宽的跨导（G_M）特性，其在VD = 5V的VD = 5V中的影响对于高线性装置性能至关重要。这种宽的G_M特性是因为来自侧壁MOS通道的电流与来自二维电子气（2deg）通道的电流相当，因此显着贡献总装置电流。另一方面，具有较小WFIN = 50和100nm的装置常截止性能，分别具有2.0和0.6V的正阈值电压，并且较少的大型GM特性，因为来自侧壁MOS通道的电流主导了总设备当前的。

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