The process of low-stress silicon nitride and the application in the fabrication of MEMS device

机译：低应力氮化硅的过程及其在MEMS装置的制造中的应用

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Silicon nitride (Si_3N_4) is an important thin film materials in the construction of micromachined devices that depend upon low stress thin films. This paper presents the methods to obtain desired low stress levels for use in micromachined devices. By analyzing the mechanism of the stress, we developed the processes by LPCVD, to achieve the quality levels in the applications of MEMS. And the results of this process allowed us to form a low stress film for the fabrications of micro cantilevers, and the applications in the micro mirrors in the MOEMS. At last, the results of the MEMS devices is presented.

机译：氮化硅（Si_3N_4）是在构造依赖于低应力薄膜的微机械装置的重要薄膜材料。本文介绍了获得用于微机械装置的所需低应力水平的方法。通过分析压力的机制，我们开发了LPCVD的过程，以实现MEMS应用中的质量水平。并且该过程的结果使我们能够为微悬臂的制造形成低应力膜，以及在MOEMS中的微镜中的应用。最后，提出了MEMS设备的结果。

著录项

来源
《International Conference on Thin Film Physics and Applications》|2004年||共4页
会议地点
作者
Hongtao He; Yongqing Xu; Yongjun Yang;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类薄膜物理学;
关键词
stress; film; MEMS;

机译：压力;电影;mems;

相似文献

外文文献
中文文献
专利

1. Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications [J] . Haisheng San, Zhiqiang Deng, Yuxi Yu, Journal of Micromechanics and Microengineering . 2011,第12期

机译：具有可靠MEMS应用的MIS结构的低应力氮化硅中的介电电荷研究
2. OPTIMIZATION OF A LOW-STRESS SILICON NITRIDE PROCESS FOR SURFACE-MICROMACHINING APPLICATIONS [J] . French PJ., Mallee R., Fakkeldij EJM., Sensors and Actuators, A. Physical . 1997,第2期

机译：用于表面微加工的低应力氮化硅工艺的优化
3. Optimization of a low-stress silicon nitride process for surface-micromachining applications [J] . P.J. French, P.M. Sarro, R. Mallée Sensors and Actuators, A. Physical . 1997,第1a3期

机译：针对表面微加工应用的低应力氮化硅工艺的优化
4. The process of low-stress silicon nitride and the application in the fabrication of MEMS device [C] . Hongtao He, Yongqing Xu, Yongjun Yang International Conference on Thin Film Physics and Applications . 2004

机译：低应力氮化硅的过程及其在MEMS装置的制造中的应用
5. MEMS-based silicon nitride thin film materials and devices at cryogenic temperatures for space applications. [D] . Chuang, Wen-Hsien. 2005

机译：低温下基于MEMS的氮化硅薄膜材料和器件，用于太空应用。
6. The Hybrid Fabrication Process of Metal/Silicon Composite Structure for MEMS S&A Device [O] . Tengjiang Hu, Kuang Fang, Zhiming Zhang, 2015

机译：MEMS S＆A器件金属/硅复合结构的混合制造工艺
7. Fabrication of low-stress silicon nitride film for application to biochemical sensor array [O] . Young-Soo Sohn 2005

机译：低应力氮化硅膜的制备用于生物化学传感器阵列
8. Development of microwave processing of silicon nitride components for advanced heat engine applications -- Microwave annealing of silicon nitride with high additive contents. CRADA final report for CRADA Number ORNL90-0035 [R] . Tiegs, T. N. 1994

机译：用于先进热机应用的氮化硅部件微波处理的开发 - 具有高添加剂含量的氮化硅的微波退火。 CRaDa最终报告CRaDa编号ORNL90-0035

The process of low-stress silicon nitride and the application in the fabrication of MEMS device

摘要

著录项

相似文献

相关主题

期刊订阅