• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Conference on Sensor Device Technologies and Applications >Synthesis of Amide Functionalized Graphene Oxide for Humidity Sensing Application (Amide Functionalized Graphene Oxide for Humidity Sensing)
【24h】

Synthesis of Amide Functionalized Graphene Oxide for Humidity Sensing Application (Amide Functionalized Graphene Oxide for Humidity Sensing)

机译：用于湿度传感施用酰胺官能化石墨烯氧化物的合成（酰胺官能化石墨烯氧化物湿度传感）

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Amide functionalized graphene oxide (AGO) was synthesized by chemical method at room temperature. Fourier transform infrared spectroscopy, X-ray diffraction and scanning electron microscopy measurements were carried out to verify the functionalization. Thin films of graphene oxide (GO) and AGO were formed by spin coating on SiO_2/p-Si (100) substrate. The variation in the I-V characteristics was recorded at different humidity level. It has been observed that in GO the variation in resistance with humidity is relatively small as compared to AGO. The resistance of the AGO film was approximately 9.87 kΩ at 10% relative humidity (RH), and decreases to 1.5 kΩ at 90% RH.
机译：酰胺官能化石墨烯氧化物（前）通过化学方法在室温下合成。进行傅里叶变换红外光谱，进行X射线衍射和扫描电子显微镜测量以验证功能化。石墨烯氧化薄膜（GO）和前一薄膜通过旋涂在SiO_2 / P-Si（100）底物上形成。在不同的湿度水平上记录I-V特性的变化。已经观察到，与前一相比，在湿度的情况下，湿度的变化相对较小。以前以前的膜的电阻在10％相对湿度（RH）下约为9.87kΩ，并且在90％RH下降至1.5kΩ。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号