• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>DAE Solid State Physics Symposium >Colossal Magnetoresistance and Phase Separation in Manganite Thin Films
【24h】

Colossal Magnetoresistance and Phase Separation in Manganite Thin Films

机译：锰铁薄膜中的巨大磁阻和相分离

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the present work, polycrystalline Sm_05_5Sr_04_5MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., T_C/T_(IM), (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (~99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.
机译：在本作工作中，通过超声雾化喷雾热解技术在LSAT（001）单晶基板上制备多晶SM_05_5SR_04_5MNO3薄膜。 X射线衍射θ-2θ扫描显示，这些薄膜（I）具有非常好的结晶度，（ii）沿着面外C方向取向，（III）在小拉伸菌株下。氧空位结果的影响（i）升高的顺磁绝缘体（PMI）对铁磁性金属（FMM）转变温度，即T_C / T_（IM），（II）锐白PMI-FMM转换，（III）更高的值磁化和磁血液饱和矩，（iv）磁阻值较高（〜99％）。我们在此建议氧气空缺率源于FMM阶段，而氧空位湮没导致反铁磁性充电有序绝缘体（AFM-COI）相。已经在竞争的FMM和AFM-COI相位不同的分离（PS）的上下文中解释了所观察结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号