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首页> 外文会议>IEEE Nuclear Science Symposium >A CMOS pulsed-reset preamplifier for silicon drift detectors with on-chip JFET
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A CMOS pulsed-reset preamplifier for silicon drift detectors with on-chip JFET

机译：用于片上JFET的硅漂移探测器的CMOS脉冲复位前置放大器

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In this work we propose a CMOS preamplifier for Silicon Drift Detectors (SDDs) for X-ray Spectroscopy as well as gamma-ray imaging applications. As in the case of SiLi and other conventional detectors, the pulsed-reset technique is adopted in this design. In fact, although continuous reset techniques have been employed widely with recent generation of SDDs for spectroscopy mainly thanks to their ease of operation, the additional noise usually introduced by the continuous reset limits the performances especially at high rates or for not-negligible levels of leakage current. This represents a limiting factor especially for the SDD which is especially winning in performances in high-rate conditions. The circuit here presented is a CMOS pulsed-reset preamplifier especially designed for SDDs where the input JFET is integrated on the detector itself. The circuit is suitable for systems using array of SDDs. A single channel circuit has been designed in AMS 0.35 μm CMOS technology. The architecture of the circuit and the preliminary results of its experimental characterization are presented in this work.
机译：在这项工作中，我们向X射线光谱和伽马射线成像应用提出了一种用于硅漂移检测器（SDDS）的CMOS前置放大器。如在SILI和其他传统检测器的情况下，在这种设计中采用脉冲复位技术。事实上，虽然近期使用近期SDDS用于光谱学的持续复位技术主要是由于它们的易操作性，但是通常由连续复位引入的额外噪声限制了尤其是高速率或不可忽略的泄漏水平的性能限制当前的。这代表了一个限制因素，特别是对于在高速率条件下的表现中特别获胜的SDD。这里提出的电路是CMOS脉冲复位前置放大器，特别是为SDD设计，其​​中输入JFET集成在探测器本身上。该电路适用于使用SDD阵列的系统。在AMS0.35μmCMOS技术中设计了单通道电路。这项工作中提出了电路的结构和实验表征的初步结果。

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