P-spray isolation of double-sided detectors is investigated by computer simulations and measurements on full-size detector prototypes. Simulations showed that boron p-spray implant doses 4·10{sup}12, 6·10{sup}12, and 8·10{sup}12 cm{sup}-2 and implant energy 60 keV would yield breakdown voltages above 200V for unirradiated detectors with oxide charge 2·10{sup}11 cm{sup}-2. The simulations showed that the breakdown voltage decreases with increasing p-spray dose. According to the computer simulations, the detectors should perform equally well after irradiation giving an oxide charge of 1·10{sup}12cm{sup}-2. HERA-B strip detectors with p-spray isolation were manufactured, using the three simulated doses. The average breakdown voltages and standard deviations were 167±31 V for the 4·10{sup}cm{sup}-2 dose, 151±16 V for the 6·10cm{sup}-2 dose, and 127±13 V for the 8·10{sup}12 cm{sup}-2 dose. The measured decrease in breakdown voltage is in good agreement with the computer simulations.
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