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首页> 外文会议>Conference on Ph.D Research in Microelectronics and Electronics >Design and Comparison of Low Power Pulse Combining IR-UWB Transmitters in 180nm CMOS
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Design and Comparison of Low Power Pulse Combining IR-UWB Transmitters in 180nm CMOS

机译：180NM CMOS中IR-UWB发射器的低功率脉冲的设计与比较

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摘要

This paper presents design and comparison of low power pulse shaping methods for achieving low energy per pulse (EPP), Impulse Radio Ultra-Wideband (IR-UWB) transmitter. The proposed transmitters are composed of all digital single pulse generator, multiple delay lines, a pulse combination circuit, and pulse shaping stages with a pulse shaping capacitor and wire-bond inductor at the output. The generated mono pulse width and the consecutive mono pulse positions are determined by the delay lines. The proposed transmitter architectures are designed in 180 nm CMOS technology, and supply voltage is 1.8V. The simulation results show that the energy required to generate the Gaussian mono-cycle, triplet, and quintuplet pulses are 10.5 pJ, 22.15 pJ, and 36.5 pJ respectively at 200 MHz pulse repetition frequency (PRF) without band pass filter (BPF). The required energies utilizing a BPF to generate output signals are 17.5 pJ, 31.5 pJ, and 46 pJ respectively.
机译：本文介绍了低功率脉冲整形方法的设计和比较，用于实现每个脉冲（EPP）的低能量（EPP），脉冲无线电超宽带（IR-UWB）变送器。所提出的发射机由所有数字单脉冲发生器，多个延迟线，脉冲组合电路和脉冲整形阶段构成，脉冲整形电容器和输出处的引线键合电感器。产生的单脉冲宽度和连续的单声脉冲位置由延迟线确定。所提出的发射器架构采用180nm CMOS技术设计，电源电压为1.8V。仿真结果表明，在没有带通滤波器（BPF）的200 MHz脉冲重复频率（PRF）下，分别为10.5Pj，22.15pj和36.5 pj所需的能量分别为10.5 pj，22.15pj和36.5 pj。利用BPF生成输出信号的所需能量分别为17.5 pj，31.5 pj和46 pj。

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