Fabrication of 90° Wall of {100} Plane on (100) Si by NaOH Solution Via Design of Experiments

机译：通过实验设计通过NaOH溶液在（100）Si上的90°壁的制造

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The experimental trials were conducted by design of experiments (DOE) technique to find an anisotropic wet etching condition that achieves 90° wall angle on silicon (100) orientation wafer. Three considered factors assigned to the DOE were NaOH concentration, solution temperature, and stirring speed. The response aimed for this study was not only targeting at 90°wall but also providing highest etch rate. The experimental results showed that in order to fabricate the 90° wall angle, the best etching condition using was 30% wt NaOH concentration, 80°C solution temperature, and 300 rpm stirring speed. This condition gave an etch rate of 1245 nm/min with surface roughness (Ra) of 701.48 nm.

机译：通过设计实验（DOE）技术进行实验试验，以找到各向异性湿法蚀刻条件，该条件在硅（100）取向晶片上实现了90°壁角。分配给DOE的三个被认为是NaOH浓度，溶液温度和搅拌速度。旨在本研究的响应不仅瞄准90°壁，而且提供最高的蚀刻速率。实验结果表明，为了制造90°壁角，使用最佳蚀刻条件为30％wt NaOH浓度，80℃溶液温度和300rpm搅拌速度。该条件具有1245nm / min的蚀刻速率，表面粗糙度（Ra）为701.48nm。

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《International Conference on Manufacturing》|2014年||共5页
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作者
Chupong Pakpum; Nirut Pussadee;
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中图分类 TH16-53;
关键词
90° wall; Silicon (100); NaOH solution; Anisotropic wet etching;

机译：90°墙壁;硅（100）;NaOH溶液;各向异性湿法蚀刻;

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1. Some investigations on the anisotropy of the chemical etching of (hk0) and (hhl) silicon plates in a NaOH 35/100 solution. Part II: 3D etching shapes, analysis And comparison with koh 56/100 [J] . C. R. Tellier, C. A. Hodebourg, S. Durand Active and Passive Electronic Components . 2001,第4期

机译：关于在NaOH 35/100溶液中化学蚀刻（hk0）和（hhl）硅片的各向异性的一些研究。第二部分：3D蚀刻形状，分析以及与koh 56/100的比较
2. AlGaAs ridge laser with 33% wall-plug efficiency at 100 degrees C based on a design of experiments approach [J] . Fecioru Alin, Boohan Niall, Justice John, Semiconductor science and technology . 2016,第4期

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3. Electrochemical reactivity of formamidoxime on Pt(111) and (100)single-crystal surfaces in 0.1 M NaOH solution [J] . Boguslaw Pierozynski, Ireneusz M. Kowalski Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry . 2011,第2期

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4. Fabrication of 90° Wall of {100} Plane on (100) Si by NaOH Solution Via Design of Experiments [C] . Chupong Pakpum, Nirut Pussadee International Conference on Manufacturing . 2014

机译：通过实验设计通过NaOH溶液在（100）Si上的90°壁的制造
5. Design, fabrication, and characterization of tungsten/silicon germanium/silicon raised single source/drains for sub-100nm CMOS and sub-70nm fully self-aligned double-gated CMOS [D] . Gan, Dong 2000

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7. Fabrication of Bicrystals of Magnesium Oxide with {100} Cleavage Plane [O] . Shiushichi KIMURA, Hwan KIM, Eiichi YASUDA 1975

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8. 100-NR-2 Apatite Treatability Test: High-Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization [R] . Vermeul, V. R., Fritz, B. G., Fruchter, J. S., 2010

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Fabrication of 90° Wall of {100} Plane on (100) Si by NaOH Solution Via Design of Experiments

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