• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Lasers and Electro-Optics Society Annual Meeting >Impurity induced layer disordering and its importance in optoelectronic device fabrication
【24h】

Impurity induced layer disordering and its importance in optoelectronic device fabrication

机译：杂质诱导层调及其在光电器件制造中的重要性

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Summary form only given. Impurity Induced Layer Disordering (IILD) has become an established technique for the fabrication of high performance edge emitting semiconductor lasers in the AlGaAs material system. Examples of such devices are high power lasers and low threshold buried heterostructure lasers. Further, promising demonstrations have been made of the application of this technique to lateral heterojunction bipolar transistors and multiple wavelength laser arrays. In addition to the specific device applications of the IILD process, the general observation of enhanced interdiffusion in the presence of impurities has significance for many device processing technologies. For instance, in the InGaAlP/GaAs and InGaAsP/InP material systems, strain and defect generation result from non-uniform intermixing between the anion and cation lattice constituents. Resolution of these issues is desirable, as these material systems are key for laser device applications in the visible and telecommunications infrared wavelengths. The rapidly developing field of vertical cavity surface emitting lasers is following a path analogous to that of the edge emitting laser in the area of device process development. Disordering based techniques have been explored for the improvement of the performance of these devices.
机译：摘要表格仅给出。杂质诱导层失调（IILD）已成为在Algaas材料系统中制造高性能边缘发射半导体激光器的建立技术。这种装置的示例是高功率激光器和低阈值掩埋异质结构激光器。此外，已经对横向异质结双极晶体管和多波长激光阵列的应用，已经提出了有希望的示范。除了IILD过程的特定器件应用外，对杂质存在的增强间隔的一般观察具有许多设备处理技术的重要性。例如，在IngaALP / GaAs和InGaASP / InP材料系统中，菌株和缺陷产生由阴离子和阳离子晶格成分之间的不均匀混合产生。由于这些材料系统是可见光和电信红外波长中的激光器件应用的关键，因此需要解决这些问题的解决方案。垂直腔表面发射激光器的快速显影领域跟着一种类似于设备过程开发领域的边缘发射激光器的路径。已经探索了基于无障碍的技术来改进这些设备的性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号