Optically generated THz beams from metal/GaAs interfaces

机译：来自金属/ GaAs接口的光学生成的THz光束

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Free space generation and propagation of electromagnetic pulses at THz frequencies is a fast growing sub-field in the photonics and optoelectronics community. Currently there are two general techniques utilizing ultrafast laser pulses to generate THz beams from semiconductors: photoconduction and optical rectification. The photoconductive method uses high-speed photoconductors as transient current sources for radiating antennas, whereas optical rectification uses electro-optic crystals as nonlinear media for difference-frequency-generation. In this paper we report on further studies of laser induced THz beams form metal/GaAs interfaces.

机译：THz频率的自由空间产生和传播电磁脉冲是光子学和光电子界的快速生长子场。目前，利用超快激光脉冲产生两种通用技术，以产生来自半导体的THz光束：光电通电和光学整流。光电导法使用高速光电导体作为用于辐射天线的瞬态电流源，而光学整流使用电光晶体作为非线性介质进行差异频率产生。在本文中，我们报告了对激光诱导的THz光束形成金属/ GaAs界面的进一步研究。

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《Lasers and Electro-Optics Society Annual Meeting》|1994年||共2页
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Ma X.F.; Jin Y.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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机译：通过分子束外延生长的GaAs / AlGaAs和InGaAs / InAlAs异质结构中的超扁平（411）A界面和均匀波纹（775）B界面
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4. Optically generated THz beams from metal/GaAs interfaces [C] . Ma, X.F., Jin, . 1994

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6. Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires [O] . Ramon delos Santos, Jasher John Ibañes, Maria Herminia Balgos, 2015

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8. Investigation of the Electrical and Optical Properties of Organometallic Vapor-Phase Epitaxial Al/sub X/Ga/sub 1-X/As and Al/sub X/Ga/sub 1-X/As/GaAs Interfaces in Solar Cells. Progress Report, 16 December 1981-1 December 1982 [R] . Bhattacharya, P. K. 1982

机译：太阳能电池中有机金属气相外延al / sub X / Ga / sub 1-X / as和al / sub X / Ga / sub 1-X / as / Gaas界面的电学和光学性质研究。进展报告，1981年12月16日至1982年12月

Optically generated THz beams from metal/GaAs interfaces

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