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DRASTIC CHANGE IN THE GaN FILM QUALITY BY IN-SITU CONTROLLING SURFACE RECONSTRUCTIONS IN GSMBE

机译：通过原位控制GASMBE控制表面重建的GAN薄膜质量的剧烈变化

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GaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH_3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H_2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

机译：通过气源分子束外延（GSMBE）在6H-SiC（0001）基材上进行GaN生长，使用氨（NH_3）作为氮源。根据生长条件，在GaN生长期间观察到两种反射高能电子衍射（RHEED）图案，命名（1×1）和（2×2）。通过仔细的RHEEED研究，验证（1×1）模式对应于H_2相关的富氮表面，而（2×2）图案是由富含GA的表面产生的。通过X射线衍射（XRD），光致发光（PL）和原子力显微镜（AFM）表征，发现GaN质量在不同的RHEED模式下大大变化。 GaN膜在（1×1）raweed模式下成长，比在（2×2）下方种植得多的品质更好。

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《Symposium on nitride semiconductors》|1998年||共4页
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1. jEffect of the nucelation layer depositoin temperature on the nature of defects in GSMBE GaN films [J] . P. Vennegues, N. Grandjean, J. Massies Journal of Crystal Growth . 1999,第MAY期

机译：j成核层沉积温度对GOMBE GaN薄膜缺陷性质的影响
2. Unusual Antibacterial Property of Mesoporous Titania Films: Drastic Improvement by Controlling Surface Area and Crystallinity [J] . Hamid Oveisi, Simin Rahighi, Xiangfen Jiang, Chemistry, an Asian journal . 2010,第9期

机译：中孔二氧化钛薄膜的非同寻常的抗菌性能：通过控制表面积和结晶度而大幅度改善
3. Influence of in-situ deposited SiN_x interlayer on crystal quality of GaN epitaxial films [J] . Fan Teng, Jia Wei, Tong Guangyun, Superlattices and microstructures . 2018,第MAY期

机译：原位沉积SiN_x中间层对GaN外延膜晶体质量的影响
4. DRASTIC CHANGE IN THE GaN FILM QUALITY BY IN-SITU CONTROLLING SURFACE RECONSTRUCTIONS IN GSMBE [C] . Symposium on nitride semiconductors . 1998

机译：通过原位控制GASMBE控制表面重建的GAN薄膜质量的剧烈变化
5. In-situ Surface Enhanced Raman Spectroscopy Investigation of the Surface Films on Alloy 600 and Alloy 690 in Pressurized Water Reactor-Primary Water. [D] . Wang, Feng. 2012

机译：原水表面增强拉曼光谱研究在压水反应堆-原水中的600和690合金表面膜。
6. Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates [O] . Kai Huang, Qi Jia, Tiangui You, -1

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7. The oceans mediate the response of global climate to natural and anthropogenic forcings. Yet for the past 2,000 years — a key interval for understanding the present and future climate response to these forcings — global sea surface temperature changes and the underlying driving mechanisms are poorly constrained. Here we present a global synthesis of sea surface temperatures for the Common Era (ce) derived from 57 individual marine reconstructions that meet strict quality control criteria. We observe a cooling trend from 1 to 1800 ce that is robust against explicit tests for potential biases in the reconstructions. Between 801 and 1800 ce, the surface cooling trend is qualitatively consistent with an independent synthesis of terrestrial temperature reconstructions, and with a sea surface temperature composite derived from an ensemble of climate model simulations using best estimates of past external radiative forcings. Climate simulations using single and cumulative forcings suggest that the ocean surface cooling trend from 801 to 1800 ce is not primarily a response to orbital forcing but arises from a high frequency of explosive volcanism. Our results show that repeated clusters of volcanic eruptions can induce a net negative radiative forcing that results in a centennial and global scale cooling trend via a decline in mixed-layer oceanic heat content. [O] . McGregor, Helen V., Evans, Michael N., Goosse, Hugues, 2015

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DRASTIC CHANGE IN THE GaN FILM QUALITY BY IN-SITU CONTROLLING SURFACE RECONSTRUCTIONS IN GSMBE

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