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High spatial resolution ultrafast scanning tunneling microscopy

机译:高空间分辨率超快扫描隧道显微镜显微镜

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We demonstrate ultrafast dynamical imaging of surfaces using a scanning tunneling microscope with a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. We detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution (full-width at half maximum) of 1.7 ps. By dynamically imaging the stripline, we demonstrate that the local conductivity in the sample is reflected in the transient correlated current and that 20-nm spatial resolution is achievable for a 2 ps transient, correlated signal. We apply this technique of photoconductively-gated ultrafast scanning tunneling microscopy to study carrier dynamics in InAs/GaAs self-assembled quantum dot samples at T = 300 K. The initial carrier relaxation proceeds via Auger carrier capture from the InAs wetting layer (WL) on a timescale of 1-2 ps, followed by recombination of carriers on a 900 ps timescale. Finally, we demonstrate junction-mixing ultrafast STM (JM-USTM) using picosecond voltage pulses propagating on a patterned metal-on-metal (Ti/Pt). Using JM-USTM we have achieved a spatio/temporal resolution of 1 nm/8 ps.
机译:我们展示了使用扫描隧道显微镜的表面的超快动态成像,其具有100-FS,800nm脉冲的低温生长的GaAs尖端。我们检测COPLANAR带状线上的PICOSECOND瞬变,并展示1.7 ps的时间分辨率(半最大宽度)。通过动态成像线状成像,我们证明样品中的局部电导率反映在瞬态相关电流中,并且可以为2ps瞬态相关信号实现20-nm空间分辨率。我们应用这种光电导通门超速扫描隧穿显微镜的技术,以在T = 300K处研究INAS / GAAS自组装量子点样品中的载波动力学。初始载体弛豫通过螺旋载体从INAS润湿层(WL)捕获来进行少尺寸为1-2 ps,然后在900 ps时间内重组载体。最后,我们使用在图案化的金属上的金属(Ti / Pt)上传播的皮秒电压脉冲展示结混合混合超快STM(JM-USTM)。使用JM-USTM,我们已经实现了1nm / 8 ps的时空/时间分辨率。

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