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Direct measurement of planarization length for copper chemical mechanical planarization polishing (CMP) processes using a large pattern test mask

机译：使用大型图案试验面罩直接测量铜化学机械平坦化抛光（CMP）工艺的平坦化长度

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We have used a large pattern test mask and a specific arrangement of structures on a wafer for direct measurement of an average planarization length for copper chemical mechanical polishing (CMP) processes.We propose new minimum,maximum,and average planarization length definitions,based on up and down area measurements as a function of trench width.The average planarization length is useful for qualitatively comparing the planarization capability of copper CMP processes.We have also performed several experiments that show how the average planarization length depends on polish process settings such as down force and relative speed,as well as on consumables such as pad and slurry.

机译：我们已经使用了大型测试掩模和晶片上的结构的特定布置，用于直接测量铜化学机械抛光（CMP）过程的平均平坦化长度。我们基于以下提出新的最小，最大值和平均平坦的平坦定义。上下区域测量作为沟槽宽度的函数。平均平坦化长度可用于定性比较铜CMP过程的平坦化能力。我们还进行了几个实验，该实验表明平均平坦化长度如何取决于波兰工艺设置，例如下降力和相对速度，以及垫和浆料等耗材。

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《Materials Research Society Symposium》|2001年||共6页
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Paul Lefevre; Albert Gonzales; Tom Brown; Gerald Martin; Tamba Tugbawa; Tae Park; Duane Boning; Michael Gostein; John Nguyen;
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中图分类工程材料学;
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1. Effect on Two-Step Polishing Process of Electrochemical Mechanical Planarization and Chemical-Mechanical Planarization on Planarization [J] . Sukhoon Jeong, Sukbae Joo, Hyoungjae Kim, Japanese journal of applied physics . 2009,第6issue1期

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2. Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance [J] . Magi Nagar, Jan Vaes, Yair Ein-Eli Electrochimica Acta . 2010,第8期

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3. A Combined Gas Cluster Ion Beam (GCIB) and Chemical-Mechanical Polish (CMP) Planarization Scheme for Tungsten Replacement Metal Gate (W-RMG) [J] . Tseng Wei-Tsu, Long Justin, Mohan Kaushik, ECS Journal of Solid State Science and Technology . 2016,第7期

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4. DIRECT MEASUREMENT OF PLANARIZATION LENGTH FOR COPPER CHEMICAL MECHANICAL PLANARIZATION POLISHING (CMP) PROCESSES USING A LARGE PATTERN TEST MASK [C] . Paul Lefevre, Albert Gonzales, Tom Brown, Symposium on Chemical-Mechanical Polishing 2001-Advances and Future Challenges, Apr 18-20, 2001, San Francisco, California . 2001

机译：使用大型图案测试面罩直接测量铜化学机械平面抛光（CMP）过程的平面化长度
5. Fundamental studies of chemical mechanical planarization (CMP) processes of tungsten and copper. [D] . Lim, Min Soo. 2002

机译：钨和铜的化学机械平面化（CMP）工艺的基础研究。
6. Effect of Conditioner Type and Downforce and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance [O] . Jeffrey McAllister, Calliandra Stuffle, Yasa Sampurno, 2019

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7. Direct Measurement Of Planarization Length For Copper Chemical Mechanical Planarization Polishing (cmp) Processes Using A Large Pattern Test Mask [O] . Paul Lefevre Albert, Albert Gonzales, Tom Brown, 2007

机译：使用大型图案测试掩模直接测量铜化学机械平面抛光（cmp）工艺的平面长度

Direct measurement of planarization length for copper chemical mechanical planarization polishing (CMP) processes using a large pattern test mask

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