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首页> 外文会议>Materials Research Society Symposium >Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications
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Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

机译：CMOS栅极电极应用中化学气相沉积沉积钌和钌氧化钌薄膜的表征

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This study describes work carried out to date involving evaluation of the chemical,structural,and electrical performance of ruthenium (Ru) and ruthenium oxide (RuO_2) films grown on SiO_2 substrates employing metal organic chemical vapor deposition (MOCVD).Diethyl ruthenocene and oxygen were employed as reactant gases for this work,which was carried out using a 200-mm wafer cluster tool.The films were characterized using cross-sectional scanning electron microscopy (CS-SEM),four-point resistance probe,x-ray photoelectron spectroscopy (XPS),Rutherford backscattering spectrometry (RBS),x-ray diffraction (XRD),and energy dispersive spectrometry (EDS).Capacitance-voltage (C-V) measurements were also carried out to assess the work function of the deposited films.It was determined that both Ru and RuO_2 phases possess near-bulk resistivity and low contamination levels.Importantly,it was observed that the film stoichiometry could be modulated by controlled changes of the processing conditions,and that pure Ru and RuO_2 films can be deposited in an oxygen ambient.In order to assess thermal stability,the films were subsequently annealed in forming gas and oxygen ambients,and it was found that the film stability is dependent upon both the deposited phase and the annealing ambient.Results of PMOS gate electrode performance testing of CVD Ru films,has been carried out,and the results are similar to those previously reported for ruthenium-based films.
机译：本研究描述了涉及评估钌（Ru）和在使用金属有机化学气相沉积（MOCVD）的SiO_2底物上生长的钌（Ru）和氧化钌（Ruo_2）膜的化学，结构和电性能的迄今为止评估的工作.Diethyl钌和氧用作该工作的反应气体，其使用200mm晶片簇工具进行。使用横截面扫描电子显微镜（CS-SEM），四点电阻探头，X射线光电子能谱（ XPS），Rutherford反向散射光谱法（RBS），X射线衍射（XRD）和能量分散光谱（EDS）。还进行了施加电压（CV）测量以评估沉积的薄膜的工作功能Ru和Ruo_2阶段都具有近散装电阻率和低污染水平。分别观察到膜化学计量可以通过控制条件的受控变化来调节膜化学计量，并且纯Ru和RuO_2膜可以沉积在氧气环境中。为了评估热稳定性，随后在形成气体和氧气环境中退火膜，发现薄膜稳定性取决于沉积相并进行了退火环境。已经进行了CVD Ru膜的PMOS栅极性能测试，结果类似于先前报道的基于钌膜的PMOS栅极电极测试。

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