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Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices

机译:无定形/晶体硅杂角光电装置量子效率建模

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Amorphous/crystalline silicon (a-Si/c-Si) heterojunctions are of particular importance in photovoltaic (PV) energy conversion in a cost-effective way. This is principally due to the low temperature (low-T) nature of the process. In this work, we have analyzed a (n)a-Si/(i)a-Si/(p)c-Si heterojunction solar cell structure using theoretical models for internal quantum yield (IQY) and I-V behavior. We considered low-quality (low bulk lifetime), cheaper substrates. Thin, low bulk lifetime substrates in combination with a low-T bulk passivation scheme and low rear surface recombination can lead to a cost effective device fabrication process with competitive conversion efficiency.
机译:无定形/结晶硅(A-Si / C-Si)异质结在具有成本效益的方式中,光伏(PV)能量转换特别重要。这主要是由于该过程的低温(低T)性质。在这项工作中,我们已经分析了一种(n)A-Si /(i)A-Si /(P)C-Si异质结太阳能电池结构,用于内部量子产量(IQY)和I-V行为。我们认为低质量(低批量生产),更便宜的基板。薄,低块寿命寿命基板与低T散装钝化方案和低后表面复合的组合可以导致具有竞争性转换效率的成本有效的装置制造工艺。

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