Optimization Of Amorphous Silicon Oxide Buffer Layer For High-efficiency P-type Hydrogenated Microcrystalline Silicon Oxide-type Crystalline Silicon Heterojunction Solar Cells

Jaran Sritharathikhun; Hiroshi Yamamoto; Shinsuke Miyajima; Akira Yamada; Makoto Konagai

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Optimization Of Amorphous Silicon Oxide Buffer Layer For High-efficiency P-type Hydrogenated Microcrystalline Silicon Oxide-type Crystalline Silicon Heterojunction Solar Cells

机译：高效P型氢化微晶硅/ n型晶体硅异质结太阳能电池非晶硅缓冲层的优化

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Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition (60 MHz VHF-PECVD) at a low substrate temperature of approximately 200 ℃ were used as a front buffer layer in p-type hydrogenated microcrystalline silicon oxide-type crystalline silicon (p-μc-SiO:H-c-Si) heterojunction solar cells. We found that the oxygen concentration in the i-a-SiO:H buffer layer strongly affected the solar cell performance and that the short wavelength response in quantum efficiency (QE) was improved by oxygen addition. Employing a p-μc-SiO:H/i-a-SiO:H-Si [Czochralski (CZ), 200 μm, (100)]/i-a-Si:H-a-Si:H/Ag/Al configuration, we achieved an efficiency of 17.9% with V_(oc) of 671 mV.

机译：通过在大约200℃的低基板温度下通过超高频等离子体增强化学气相沉积（60 MHz VHF-PECVD）沉积的本征氢化非晶硅氧化物（ia-SiO：H）膜用作p-型氢化微晶氧化硅/ n型结晶硅（p-μc-SiO：H / nc-Si）异质结太阳能电池。我们发现i-a-SiO：H缓冲层中的氧浓度强烈影响太阳能电池的性能，并且通过添加氧可以改善量子效率（QE）中的短波长响应。采用p-μc-SiO：H / ia-SiO：H / n-Si [直拉（CZ），200μm，（100）] / ia-Si：H / na-Si：H / Ag / Al构型我们以671 mV的V_（oc）实现了17.9％的效率。

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来源
《Japanese journal of applied physics》 |2008年第11期|8452-8455|共4页
作者
Jaran Sritharathikhun; Hiroshi Yamamoto; Shinsuke Miyajima; Akira Yamada; Makoto Konagai;
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正文语种 eng
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heterojunction solar cells; hydrogenated silicon oxide films; buffer layer; surface passivation;

机译：异质结太阳能电池;氢化氧化硅膜;缓冲层;表面钝化;

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1. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence [J] . Krajangsang Taweewat, Moollakorn Apichan, Inthisang Sorapong, International Journal of Photoenergy . 2014,第Pta4期

机译：p型微晶氧化硅/ n型晶体硅异质结太阳能电池非晶态氧化硅缓冲层的研究及其温度依赖性
2. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence [J] . TaweewatKrajangsang, ApichanMoollakorn, SorapongInthisang, International Journal of Photoenergy . 2014,第1期

机译：p型微晶氧化硅/ n型结晶硅异质结太阳能电池的非晶氧化硅缓冲层及其温度依赖性的研究
3. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence [J] . TaweewatKrajangsang, ApichanMoollakorn, SorapongInthisang, International Journal of Photoenergy . 2014,第1期

机译：p型微晶氧化硅/ n型结晶硅异质结太阳能电池的非晶氧化硅缓冲层及其温度依赖性的研究
4. Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device [C] . Brahim Aïssa, Amir A. Abdallah, Atef Zekri, IEEE Photovoltaic Specialists Conference . 2019

机译：N型非晶和微晶氢化硅（SiOx：H）的开发及其对窗的影响对硅异质结太阳能电池器件的影响研究
5. Ultra-Thin Aluminium Oxide Tunnel Layer Passivated Contact for High-Efficiency Crystalline Silicon Solar Cells [D] . Zheng, Xin. 2018

机译：超薄铝氧化铝隧道层钝化接触，用于高效晶体硅太阳能电池
6. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells [O] . Fang-Hsing Wang, Hsin-Hui Kuo, Cheng-Fu Yang, 2014

机译：SiNx阻挡层对聚酰亚胺Ga2O3掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
7. Optimized amorphous silicon oxide buffer layers for silicon heterojunction solar cells with microcrystalline silicon oxide contact layers [O] . Ding Kaining, Aeberhard Urs, Finger Friedhelm, 2013

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8. Effect of Defect-Rich Epitaxy on Crystalline Silicon / Amorphous Silicon Heterojunction Solar Cells and the Use of Low-Mobility Layers to Improve Performance. [R] . H. A. Atwater M. G. Deceglie 2011

机译：富含缺陷外延对晶体硅/非晶硅异质结太阳能电池的影响及低迁移率层用于提高性能。

Optimization Of Amorphous Silicon Oxide Buffer Layer For High-efficiency P-type Hydrogenated Microcrystalline Silicon Oxide-type Crystalline Silicon Heterojunction Solar Cells

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