Optical properties of Al{sub}0.70Ga{sub}0.30As:Er,Yb

机译：Al {sub} 0.70ga {sub}的光学性质0.30as：ER，YB

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Erbium (Er) ions were co-implanted with ytterbium (Yb) into Al{sub}0.70Ga{sub}0.30As substrates and we realized an increase in the intensity of Er intro-4f-shell luminescence. The photoluminescence (PL) intensity of Er-related dominant peak (1538.2nm) was enhanced by co-implanted Yb. The thermal quenching was improved. PL intensity of Yb-related emission was decreased. We studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al{sub}0.70Ga{sub}0.30As. Energy transfers from 2{sup left}F{sub}(5/2) (the first exicited state) → 2{sup left}F{sub}(7/2) (the ground sate) of Yb{sup}(3+) to 4{sup left}I{sub}(13/2) (the first excited state) →4{sup left}I{sub}(15/2) (the ground state) of Er{sup}(3+) were observed by PL excitation (PLE) and selectively excited PL (SPL).

机译：铒（ER）离子与YTTerbium（Yb）共注入Al {亚} 0.70Ga {uS} 0.30AS基板，我们意识到ER Intro-4F-shell发光强度的增加。通过共注入的Yb增强了ER相关优势峰（1538.2nm）的光致发光（PL）强度。热淬火得到改善。 PL强度相关的YB相关排放量减少。我们研究了在Al {Sub} 0.70As中与ER离子共注入的Yb离子的转移能量和光学敏化。从2 {sup left} f {sub}（5/2）（第一个被泄露的状态）→2 {sup left} f {sub}（7/2）（3/2）（地面sate）的{sup}（3 +）至4 {sup left} i {sub}（第13/2）（第一个激励状态）→4 {sup left} i {sub}（15/2）（15/2）（er}的{sup}（3通过PL激发（PLE）观察+）并选择性激发PL（SPL）。

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《Materials Research Society Symposium》|2003年||共6页
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Shin-Ichiro Uekusa; Isao Tanaka; Tomoyuki Arai;
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中图分类工程材料学;
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Optical properties of Al{sub}0.70Ga{sub}0.30As:Er,Yb

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