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>Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers
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Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers
(Bi,La)_4Ti_3O_12 (BLT) thin films with various Bi_2O_3 template layers were prepared on Pt/Ti/SiO_2/Si substrates by a chemical solution deposition method.Both of the BLT films with a thin Bi_2O_3 template layer and those without a Bi_2O_3 layer had a highly c-axis oriented growth,while both of the BLT films with a thin Bi_2O_3 bottm layer and those with a Bi_2O_3 intermediate layer were highly c-axis oriented.
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机译：（Bi，La）_4Ti_3O_12（BLT）通过化学溶液沉积方法在Pt / Ti / SiO_2 / Si衬底上制备具有各种Bi_2O_3模板层的薄膜。用薄Bi_2O_3模板层和没有Bi_2O_3的那些层具有高度C轴取向的生长，而具有薄的Bi_2O_3瓶盖层的BLT薄膜和具有Bi_2O_3中间层的那些是高度的C轴取向。
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